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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD8P06ESM DISTI # RFD8P06ESM | Renesas Electronics Corporation | - Bulk (Alt: RFD8P06ESM) RoHS: Not Compliant Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| RFD8P06ESM9A DISTI # RFD8P06ESM9A | Renesas Electronics Corporation | (Alt: RFD8P06ESM9A) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| RFD8P06LESM9A DISTI # RFD8P06LESM9A | ON Semiconductor | - Bulk (Alt: RFD8P06LESM9A) Min Qty: 1 Container: Bulk | Americas - 0 | |
| RFD8P06LE | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 7200 |
|
| RFD8P06E | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 2278 |
|
| RFD8P06ESM | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 414 |
|
| RFD8P06LE | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 1753 |
|
| RFD8P06E | Harris Semiconductor | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | 19 |
|
| RFD8P06ESM | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1125 |
|
| RFD8P06ESM | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 167 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 413 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 413 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1087 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 1087 |
|
| RFD8P06LESM | Harris Semiconductor | 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | 10 |
|
| RFD8P06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 4627 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFD16N06LESM9A OMO.#: OMO-RFD16N06LESM9A |
MOSFET 60V Single |
|
Mfr.#: RFD21737 OMO.#: OMO-RFD21737 |
RF Development Tools 2.4GHz transcvr mod. Built in RFDP8 Proto |
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Mfr.#: RFD77313 OMO.#: OMO-RFD77313 |
Temperature Sensor Development Tools AS6200 Sensor Shield |
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Antennas RFDANT RFDP8 CE ETSI |
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Mfr.#: RFD15N06LESM OMO.#: OMO-RFD15N06LESM-1190 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
Mfr.#: RFD3055LESM9A |
MOSFET N-CH 60V 11A TO-252AA |
|
|
Mfr.#: RFD8P06LESM9AR4407 OMO.#: OMO-RFD8P06LESM9AR4407-1190 |
Neu und Original |
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Mfr.#: RFDIP1608060BLM6T25 OMO.#: OMO-RFDIP1608060BLM6T25-1190 |
Neu und Original |
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Mfr.#: RFDIP2012090G1T OMO.#: OMO-RFDIP2012090G1T-1190 |
Neu und Original |
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Mfr.#: RFDIP2012090GAT OMO.#: OMO-RFDIP2012090GAT-1190 |
Neu und Original |