FQU5N60CTU

FQU5N60CTU
Mfr. #:
FQU5N60CTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-CH/600V/5A/QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQU5N60CTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
2.8 A
Rds On - Drain-Source-Widerstand:
2 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
6.3 mm
Länge:
6.8 mm
Serie:
FQU5N60C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
2.5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
4.7 S
Abfallzeit:
46 ns
Produktart:
MOSFET
Anstiegszeit:
42 ns
Werkspackungsmenge:
5040
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
FQU5N60CTU_NL
Gewichtseinheit:
0.012102 oz
Tags
FQU5N60C, FQU5N60, FQU5N6, FQU5N, FQU5, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 2.8 A, 2.5 Ω, IPAK
***ure Electronics
N-Channel 600 V 2.5 Ohm Through Hole Power Mosfet - IPAK-3
***p One Stop Japan
Trans MOSFET N-CH 600V 2.8A 3-Pin(3+Tab) IPAK Tube
***ark
N-Ch/600V/5A/qfet C-Series Rohs Compliant: Yes
*** Source Electronics
MOSFET N-CH 600V 2.8A IPAK
***ser
MOSFETs N-CH/600V/5A/QFET
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQU5N60CTU
DISTI # V99:2348_06358980
ON Semiconductor600V N-CHANNEL ADVANCE QFET C-4955
  • 25000:$0.3968
  • 10000:$0.4072
  • 2500:$0.4292
  • 1000:$0.4837
  • 500:$0.5940
  • 100:$0.6919
  • 10:$0.9885
  • 1:$1.1525
FQU5N60CTU
DISTI # FQU5N60CTU-ND
ON SemiconductorMOSFET N-CH 600V 2.8A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
5030In Stock
  • 5000:$0.3854
  • 2500:$0.4057
  • 500:$0.5506
  • 100:$0.6665
  • 25:$0.8116
  • 10:$0.8550
  • 1:$0.9600
FQU5N60CTU
DISTI # 25845300
ON Semiconductor600V N-CHANNEL ADVANCE QFET C-4955
  • 18:$1.1525
FQU5N60CTU
DISTI # 14932406
ON Semiconductor600V N-CHANNEL ADVANCE QFET C-2170
  • 2170:$0.2803
FQU5N60CTU
DISTI # FQU5N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 2.8A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU5N60CTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube
Americas - 0
  • 50400:$0.3759
  • 30240:$0.3859
  • 20160:$0.3909
  • 10080:$0.3959
  • 5040:$0.3979
FQU5N60CTU
DISTI # FQU5N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 2.8A 3-Pin(3+Tab) IPAK Rail (Alt: FQU5N60CTU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.3039
  • 500:€0.3269
  • 100:€0.3539
  • 50:€0.3869
  • 25:€0.4249
  • 10:€0.4729
  • 1:€0.5319
FQU5N60CTU
DISTI # FQU5N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 2.8A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU5N60CTU)
Min Qty: 695
Container: Bulk
Americas - 0
  • 6950:$0.4439
  • 3475:$0.4549
  • 2085:$0.4609
  • 1390:$0.4669
  • 695:$0.4699
FQU5N60CTU
DISTI # 60J0880
ON SemiconductorN-CH/600V/5A/QFET C-SERIES ROHS COMPLIANT: YES0
  • 50000:$0.5030
  • 24000:$0.5140
  • 10000:$0.5290
  • 2000:$0.5590
  • 1000:$0.5630
  • 100:$0.8240
  • 10:$1.0500
  • 1:$1.3500
FQU5N60CTU
DISTI # 512-FQU5N60CTU
ON SemiconductorMOSFET N-CH/600V/5A/QFET
RoHS: Compliant
5098
  • 1:$0.9000
  • 10:$0.7730
  • 100:$0.5930
  • 500:$0.5240
  • 1000:$0.4140
  • 2500:$0.3670
  • 10000:$0.3530
FQU5N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
117685
  • 1000:$0.4100
  • 500:$0.4300
  • 100:$0.4500
  • 25:$0.4700
  • 1:$0.5000
FQU5N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
680
    Bild Teil # Beschreibung
    TIP31CG

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    OMO.#: OMO-TIP31CG

    Bipolar Transistors - BJT 3A 100V 40W NPN
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    MOSFET N-CHANNEL 60V 200mA
    STN1NK80Z

    Mfr.#: STN1NK80Z

    OMO.#: OMO-STN1NK80Z

    MOSFET POWER MOSFET Zener SuperMESH
    FSFR2100

    Mfr.#: FSFR2100

    OMO.#: OMO-FSFR2100

    AC/DC Converters 11A/600V Half-bridge
    LM7812CT/NOPB

    Mfr.#: LM7812CT/NOPB

    OMO.#: OMO-LM7812CT-NOPB

    Linear Voltage Regulators 3-Term Pos Regs
    TPS7A1633DGNR

    Mfr.#: TPS7A1633DGNR

    OMO.#: OMO-TPS7A1633DGNR

    LDO Voltage Regulators 60V,5uA IQ LDO 100mA Linear Reg
    F380J226MMAAH3

    Mfr.#: F380J226MMAAH3

    OMO.#: OMO-F380J226MMAAH3

    Tantalum Capacitors - Polymer SMD 22uF 6.3V 20% 0603 ESR=300 mOhms
    860241375002

    Mfr.#: 860241375002

    OMO.#: OMO-860241375002

    Aluminum Electrolytic Capacitors - Radial Leaded WCAP-AT1H 400V 10uF 20% ESR=6428mOhms
    TIP31CG

    Mfr.#: TIP31CG

    OMO.#: OMO-TIP31CG-ON-SEMICONDUCTOR

    Bipolar Transistors - BJT 3A 100V 40W NPN
    2N7000

    Mfr.#: 2N7000

    OMO.#: OMO-2N7000-ON-SEMICONDUCTOR

    MOSFET N-CH 60V 200MA TO-92
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von FQU5N60CTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,90 $
    0,90 $
    10
    0,77 $
    7,73 $
    100
    0,59 $
    59,30 $
    500
    0,52 $
    262,00 $
    1000
    0,41 $
    414,00 $
    2500
    0,37 $
    917,50 $
    10000
    0,35 $
    3 530,00 $
    25000
    0,34 $
    8 550,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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