FGH75T65SQDT-F155

FGH75T65SQDT-F155
Mfr. #:
FGH75T65SQDT-F155
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 650V 40A FS4 TRENCH IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGH75T65SQDT-F155 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGH75T65SQDT-F155 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Kontinuierlicher Kollektorstrom bei 25 C:
150 A
Pd - Verlustleistung:
375 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
400 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Tags
FGH75T65SQ, FGH75T65S, FGH75T, FGH7, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
FGH75T65SQDT-F155
DISTI # FGH75T65SQDT-F155-ND
ON Semiconductor650V 75A FS4 TRENCH IGBT
RoHS: Not compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$4.1570
FGH75T65SQDT-F155
DISTI # FGH75T65SQDT-F155
ON SemiconductorField Stop Trench IGBT 650 V 75 A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH75T65SQDT-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$2.5900
  • 450:$2.6900
  • 900:$2.6900
  • 1800:$2.6900
  • 2700:$2.6900
FGH75T65SQDT-F155
DISTI # 33AC5049
ON SemiconductorFIELD STOP TRENCH IGBT, 650V/150A, TO247,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:375W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of RoHS Compliant: Yes80
  • 500:$3.5900
  • 250:$4.0000
  • 100:$4.2100
  • 50:$4.4300
  • 25:$4.6400
  • 10:$4.8600
  • 1:$5.7200
FGH75T65SQDT-F155
DISTI # 863-FGH75T65SQDTF155
ON SemiconductorIGBT Transistors 650V 40A FS4 TRENCH IGBT
RoHS: Compliant
504
  • 1:$5.6600
  • 10:$4.8100
  • 100:$4.1700
  • 250:$3.9600
  • 500:$3.5500
  • 1000:$2.9900
  • 2500:$2.8400
FGH75T65SQDT-F155ON Semiconductor 12196
    FGH75T65SQDT-F155
    DISTI # 2781407
    ON SemiconductorFIELD STOP TRENCH IGBT, 650V/150A, TO247
    RoHS: Compliant
    70
    • 1000:$4.3500
    • 500:$4.8100
    • 250:$5.4800
    • 100:$6.0900
    • 10:$7.0300
    • 1:$8.0600
    FGH75T65SQDT-F155
    DISTI # 2781407
    ON SemiconductorFIELD STOP TRENCH IGBT, 650V/150A, TO24770
    • 500:£2.7600
    • 250:£3.0800
    • 100:£3.2400
    • 10:£3.7400
    • 1:£4.8800
    Bild Teil # Beschreibung
    GRF5020

    Mfr.#: GRF5020

    OMO.#: OMO-GRF5020

    RF Amplifier .01-6GHz Gain 17dB OP1dB 30.5dBm
    TPS259230DRCR

    Mfr.#: TPS259230DRCR

    OMO.#: OMO-TPS259230DRCR

    Hot Swap Voltage Controllers 12V eFUSE ( Latched )
    MCR310-10G

    Mfr.#: MCR310-10G

    OMO.#: OMO-MCR310-10G

    SCRs 800V 10A
    FGY120T65SPD-F085

    Mfr.#: FGY120T65SPD-F085

    OMO.#: OMO-FGY120T65SPD-F085

    IGBT Transistors 650V FS Trench IGBT Gen3
    NTH027N65S3F-F155

    Mfr.#: NTH027N65S3F-F155

    OMO.#: OMO-NTH027N65S3F-F155

    MOSFET SF3 FRFET 650V 27MOHM
    STTH1210DI

    Mfr.#: STTH1210DI

    OMO.#: OMO-STTH1210DI

    Rectifiers Ultrafast recovery high voltage diode
    RN4871-I/RM130

    Mfr.#: RN4871-I/RM130

    OMO.#: OMO-RN4871-I-RM130-MICROCHIP-TECHNOLOGY

    BLUETOOTH BLE MODULE, SHIELDED,
    GRF5020

    Mfr.#: GRF5020

    OMO.#: OMO-GRF5020-1152

    RF Amplifier .01-6GHz Gain 17dB OP1dB 30.5dBm
    TPS259230DRCR

    Mfr.#: TPS259230DRCR

    OMO.#: OMO-TPS259230DRCR-TEXAS-INSTRUMENTS

    Hot Swap Voltage Controllers 5V, 5A, 28m? eFuse with BFET Driver for Reverse Current Protection 10-VSON -40 to 85
    NTH027N65S3F-F155

    Mfr.#: NTH027N65S3F-F155

    OMO.#: OMO-NTH027N65S3F-F155-ON-SEMICONDUCTOR

    SF3 FRFET 650V 27MOHM
    Verfügbarkeit
    Aktie:
    503
    Auf Bestellung:
    2486
    Menge eingeben:
    Der aktuelle Preis von FGH75T65SQDT-F155 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    7,53 $
    7,53 $
    10
    6,41 $
    64,10 $
    100
    5,56 $
    556,00 $
    250
    5,27 $
    1 317,50 $
    500
    4,73 $
    2 365,00 $
    1000
    3,99 $
    3 990,00 $
    2500
    3,79 $
    9 475,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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