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FGY120T65SPD-F085

FGY120T65SPD-F085
Mfr. #:
FGY120T65SPD-F085
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 650V FS Trench IGBT Gen3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGY120T65SPD-F085 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGY120T65SPD-F085 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.5 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
240 A
Pd - Verlustleistung:
882 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGY120T65S_F085
Qualifikation:
AEC-Q101
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
240 A
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Teil # Aliase:
FGY120T65SPD_F085
Gewichtseinheit:
0.215171 oz
Tags
FGY120T65SP, FGY120, FGY12, FGY1, FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Hybrid and Electric Vehicle Solutions
ON Semiconductor Hybrid and Electric Vehicle Solutions offer easy-to-use, highly flexible, and high-performance EV/HEV solutions for powertrain and other power storage systems.ON Semiconductor has a full portfolio of MOSFETs, rectifiers and IGBTs. Applications include electrically driven A/C compressors, EV/HEV DC-DC converters, EV/HEV onboard chargers and EV/HEV traction inverters.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FGY120T65SPD-F085
DISTI # V99:2348_16116327		ON SemiconductorFS3 T TP247 120A650V AUTO56
  • 500:$6.8870
  • 250:$7.4300
  • 100:$7.8910
  • 25:$9.2210
  • 10:$9.5210
  • 1:$10.4450
FGY120T65SPD-F085
DISTI # FGY120T65SPD-F085OS-ND		ON SemiconductorIGBT 650V 240A 882W TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		373In Stock
  • 900:$7.9344
  • 450:$8.4816
  • 25:$10.1232
  • 10:$10.5610
  • 1:$11.4900
FGY120T65SPD-F085
DISTI # 25944275		ON SemiconductorFS3 T TP247 120A650V AUTO56
  • 1:$10.4450
FGY120T65SPD_F085
DISTI # FGY120T65SPD-F085		ON SemiconductorTrans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube (Alt: FGY120T65SPD-F085)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€6.3900
  • 500:€6.4900
  • 100:€6.6900
  • 50:€6.7900
  • 25:€7.1900
  • 10:€7.3900
  • 1:€9.1900
FGY120T65SPD_F085
DISTI # FGY120T65SPD-F085		ON SemiconductorTrans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY120T65SPD-F085)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$6.3900
  • 2700:$6.4900
  • 1800:$6.5900
  • 900:$6.6900
  • 450:$6.7900
FGY120T65SPD-F085
DISTI # 48AC1126		ON SemiconductorFS3 T TP247 120A650V AUTO / TUBE0
  • 500:$9.0400
  • 250:$9.6400
  • 100:$10.3400
  • 50:$11.2400
  • 1:$12.3400
FGY120T65SPD-F085
DISTI # 512-FGY120T65SPDF085		ON SemiconductorIGBT Transistors 650V FS Trench IGBT Gen3
RoHS: Compliant		456
  • 1:$10.9400
  • 10:$10.0600
  • 25:$9.6400
  • 100:$8.4900
  • 250:$8.0800
  • 500:$7.5600
  • 1000:$6.9300
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 MOSFET N-CHAN 600V
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Mfr.#: FGH75T65SQDT-F155

OMO.#: OMO-FGH75T65SQDT-F155-ON-SEMICONDUCTOR

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NVMFS6H818NWFT1G

Mfr.#: NVMFS6H818NWFT1G

OMO.#: OMO-NVMFS6H818NWFT1G-ON-SEMICONDUCTOR

 Power MOSFET 80 V, 3.7 mW, 123 A, Single N-Channel
Verfügbarkeit
Aktie:
456
Auf Bestellung:
2439
Menge eingeben:
Der aktuelle Preis von FGY120T65SPD-F085 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,94 $
10,94 $
10
10,06 $
100,60 $
25
9,64 $
241,00 $
100
8,49 $
849,00 $
250
8,08 $
2 020,00 $
500
7,56 $
3 780,00 $
1000
6,93 $
6 930,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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