SIRA90DP-T1-GE3

SIRA90DP-T1-GE3
Mfr. #:
SIRA90DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 100A Id Qg 48nC Typ.
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIRA90DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRA90DP-T1-GE3 DatasheetSIRA90DP-T1-GE3 Datasheet (P4-P6)SIRA90DP-T1-GE3 Datasheet (P7-P9)SIRA90DP-T1-GE3 Datasheet (P10-P12)SIRA90DP-T1-GE3 Datasheet (P13)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
650 uOhms
Vgs th - Gate-Source-Schwellenspannung:
800 mV
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
153 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
104 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
HERR
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
110 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
16 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.002610 oz
Tags
SIRA9, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 100A POWERPAKSO
***ark
MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 30V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):650µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:104W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Teil # Mfg. Beschreibung Aktie Preis
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$0.5264
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3
Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA90DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4819
  • 30000:$0.4949
  • 18000:$0.5089
  • 12000:$0.5309
  • 6000:$0.5469
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3
Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R (Alt: SIRA90DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1000:€0.5249
  • 500:€0.5319
  • 100:€0.5409
  • 50:€0.5489
  • 25:€0.6209
  • 10:€0.7659
  • 1:€1.0679
SIRA90DP-T1-GE3
DISTI # 20AC3876
Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.4780
  • 6000:$0.4890
  • 4000:$0.5080
  • 2000:$0.5640
  • 1000:$0.6210
  • 1:$0.6470
SIRA90DP-T1-GE3
DISTI # 15AC8636
Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):650µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes0
  • 500:$0.7220
  • 250:$0.7810
  • 100:$0.8390
  • 50:$0.9270
  • 25:$1.0100
  • 10:$1.1000
  • 1:$1.3300
SIRA90DP-T1-GE3
DISTI # 78-SIRA90DP-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 100A Id Qg 48nC Typ.
RoHS: Compliant
967
  • 1:$1.3100
  • 10:$1.0800
  • 100:$0.8310
  • 500:$0.7150
  • 1000:$0.5640
SIRA90DP-T1-GE3
DISTI # 2749593
Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO0
  • 500:£0.5610
  • 250:£0.6070
  • 100:£0.6530
  • 25:£0.8490
  • 5:£0.9410
SIRA90DP-T1-GE3
DISTI # 2749593
Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO
RoHS: Compliant
0
  • 1000:$0.8850
  • 500:$0.9380
  • 250:$1.1100
  • 100:$1.3400
  • 10:$1.7200
  • 1:$2.0700
Bild Teil # Beschreibung
BZT52H-B3V3,115

Mfr.#: BZT52H-B3V3,115

OMO.#: OMO-BZT52H-B3V3-115

Zener Diodes 3.37V 1uA 95Ohm
NX7002AKVL

Mfr.#: NX7002AKVL

OMO.#: OMO-NX7002AKVL

MOSFET NX7002AK/TO-236AB/REEL 11" Q3/
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML

Thick Film Resistors - SMD 1M OHM 1%
RC0603FR-070RL

Mfr.#: RC0603FR-070RL

OMO.#: OMO-RC0603FR-070RL

Thick Film Resistors - SMD 0.0ohm 1%
CRCW0603100RFKEAC

Mfr.#: CRCW0603100RFKEAC

OMO.#: OMO-CRCW0603100RFKEAC-VISHAY-DALE

D11/CRCW0603-C 100 100R 1% ET1
NX7002AKVL

Mfr.#: NX7002AKVL

OMO.#: OMO-NX7002AKVL-NEXPERIA

MOSFET N-CH 60V 190MA TO236AB
CRCW06031K00FKEAC

Mfr.#: CRCW06031K00FKEAC

OMO.#: OMO-CRCW06031K00FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 1K0 1% ET1
BZT52H-B3V3,115

Mfr.#: BZT52H-B3V3,115

OMO.#: OMO-BZT52H-B3V3-115-NEXPERIA

Zener Diodes 3.37V 1uA 95Ohm
RC0603FR-070RL

Mfr.#: RC0603FR-070RL

OMO.#: OMO-RC0603FR-070RL-YAGEO

Thick Film Resistors - SMD 0.0ohm 1%
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML-YAGEO

Thick Film Resistors - SMD 1M OHM 1%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von SIRA90DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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