SIRA9

SIRA90DP-T1-RE3 vs SIRA90DP-T1-GE3 vs SIRA96DP-T1-GE3

 
PartNumberSIRA90DP-T1-RE3SIRA90DP-T1-GE3SIRA96DP-T1-GE3
DescriptionMOSFET 30V Vds TrenchFET PowerPAK SO-8MOSFET 30V Vds 100A Id Qg 48nC Typ.MOSFET N-CH 30V 16A POWERPAKSO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance650 uOhms650 uOhms-
Vgs th Gate Source Threshold Voltage800 mV800 mV-
Vgs Gate Source Voltage20 V, - 16 V20 V, - 16 V-
Qg Gate Charge153 nC153 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min110 S110 S-
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns16 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time46 ns46 ns-
Typical Turn On Delay Time15 ns15 ns-
Unit Weight0.017870 oz0.002610 oz-
Transistor Type-1 N-Channel-
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA99DP-T1-GE3 MOSFET P-Channel 30 V (D-S) MOSFET
SIRA90DP-T1-RE3 MOSFET 30V Vds TrenchFET PowerPAK SO-8
SIRA90DP-T1-GE3 MOSFET 30V Vds 100A Id Qg 48nC Typ.
Vishay
Vishay
SIRA90DP-T1-GE3 MOSFET N-CH 30V 100A POWERPAKSO
SIRA96DP-T1-GE3 MOSFET N-CH 30V 16A POWERPAKSO-8
SIRA90DP-T1-RE3 MOSFET N-CH 30V 100A POWERPAKSO
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