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BTS112A

BTS112A
Mfr. #:
BTS112A
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 60V 6.7A TO220-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BTS112A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INF
Produktkategorie
IC-Chips
Serie
BTS112
Verpackung
Rohr
Teil-Aliasnamen
BTS112ANKSA1 SP000011185
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
40 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
55 ns
Anstiegszeit
30 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
6.7 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Widerstand
150 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
15 ns
Kanal-Modus
Erweiterung
Tags
BTS112, BTS11, BTS1, BTS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
BTS112A
DISTI # 726-BTS112A		Infineon Technologies AGMOSFET N-Ch 60V 6.7A TO220-3
RoHS: Not compliant		0
    BTS112A E3045A
    DISTI # 726-BTS112AE3045A    		Infineon Technologies AGMOSFET N-Ch 60V 12A TO220-3
    RoHS: Not compliant    		0
      BTS112AInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Not Compliant      		3712
      • 1000:$2.4600
      • 500:$2.5900
      • 100:$2.6900
      • 25:$2.8100
      • 1:$3.0200
      BTS112AE3045ANTMA1Infineon Technologies AGPower Field-Effect Transistor
      RoHS: Not Compliant      		2000
      • 1000:$4.0000
      • 500:$4.2100
      • 100:$4.3800
      • 25:$4.5700
      • 1:$4.9200
      BTS112ANKSA1Infineon Technologies AG 
      RoHS: Not Compliant      		300
      • 1:$0.0200
      • 25:$0.0200
      • 100:$0.0200
      • 500:$0.0200
      • 1000:$0.0200
      BTS112AInfineon Technologies AG 
      RoHS: Not Compliant      		Europe - 3450
        BTS112AE3045ASiemens 
        RoHS: Not Compliant        		Europe - 185
          BTS112 AInfineon Technologies AGINSTOCK43
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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4500
            Menge eingeben:
            Der aktuelle Preis von BTS112A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            3,69 $
            3,69 $
            10
            3,51 $
            35,06 $
            100
            3,32 $
            332,10 $
            500
            3,14 $
            1 568,25 $
            1000
            2,95 $
            2 952,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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