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| PartNumber | BTS112 A | BTS112A BTS112 | BTS112A |
| Description | INSTOCK | IGBT Transistors MOSFET N-Ch 60V 6.7A TO220-3 | |
| Manufacturer | - | - | INF |
| Product Category | - | - | IC Chips |
| Series | - | - | BTS112 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | BTS112ANKSA1 SP000011185 |
| Unit Weight | - | - | 0.211644 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-220-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 40 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 55 ns |
| Rise Time | - | - | 30 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 6.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 150 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 40 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Channel Mode | - | - | Enhancement |