DMN10H120SE-13

DMN10H120SE-13
Mfr. #:
DMN10H120SE-13
Hersteller:
Diodes Incorporated
Beschreibung:
Darlington Transistors MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN10H120SE-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN10H120SE-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
DMN10
Verpackung
Spule
Gewichtseinheit
0.000282 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-223-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Dual Drain
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
2.1 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
2.5 ns
Anstiegszeit
1.8 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
3.6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
1.5 V
Rds-On-Drain-Source-Widerstand
77 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
11 ns
Typische-Einschaltverzögerungszeit
3.8 ns
Qg-Gate-Ladung
10 nC
Kanal-Modus
Erweiterung
Tags
DMN10H12, DMN10H1, DMN10H, DMN10, DMN1, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Teil # Mfg. Beschreibung Aktie Preis
DMN10H120SE-13
DISTI # DMN10H120SE-13DICT-ND
Diodes IncorporatedMOSFET N-CH 100V 3.6A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5362In Stock
  • 1000:$0.2838
  • 500:$0.3592
  • 100:$0.4798
  • 10:$0.6300
  • 1:$0.7500
DMN10H120SE-13
DISTI # DMN10H120SE-13DIDKR-ND
Diodes IncorporatedMOSFET N-CH 100V 3.6A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5362In Stock
  • 1000:$0.2838
  • 500:$0.3592
  • 100:$0.4798
  • 10:$0.6300
  • 1:$0.7500
DMN10H120SE-13
DISTI # DMN10H120SE-13DITR-ND
Diodes IncorporatedMOSFET N-CH 100V 3.6A SOT223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
5000In Stock
  • 2500:$0.2536
DMN10H120SE-13
DISTI # DMN10H120SE-13
Diodes Incorporated100V N-CHANNEL ENHANCEMENT MODE MOSFET - Tape and Reel (Alt: DMN10H120SE-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 7500
  • 2500:$0.1219
  • 5000:$0.1159
  • 10000:$0.1109
  • 15000:$0.1059
  • 25000:$0.1029
DMN10H120SE-13
DISTI # DMN10H120SE-13
Diodes Incorporated100V N-CHANNEL ENHANCEMENT MODE MOSFET (Alt: DMN10H120SE-13)
RoHS: Compliant
Min Qty: 2500
Europe - 0
  • 2500:€0.2819
  • 5000:€0.2049
  • 10000:€0.1909
  • 15000:€0.1669
  • 25000:€0.1559
DMN10H120SE-13
DISTI # 621-DMN10H120SE-13
Diodes IncorporatedMOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
RoHS: Compliant
772
  • 1:$0.5800
  • 10:$0.4810
  • 100:$0.2930
  • 1000:$0.2270
  • 2500:$0.1930
  • 10000:$0.1800
  • 25000:$0.1710
DMN10H120SE-13
DISTI # XSFP00000160348
Diodes Incorporated 
RoHS: Compliant
25238
  • 2500:$0.2760
  • 25238:$0.2509
Bild Teil # Beschreibung
DMN10H170SFG-7

Mfr.#: DMN10H170SFG-7

OMO.#: OMO-DMN10H170SFG-7

MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
DMN10H170SVTQ-13

Mfr.#: DMN10H170SVTQ-13

OMO.#: OMO-DMN10H170SVTQ-13

MOSFET MOSFET BVDSS
DMN10H100SK3-13

Mfr.#: DMN10H100SK3-13

OMO.#: OMO-DMN10H100SK3-13-DIODES

MOSFET N-CH 100V 18A TO252
DMN10H120SE

Mfr.#: DMN10H120SE

OMO.#: OMO-DMN10H120SE-1190

Neu und Original
DMN10H170SFG

Mfr.#: DMN10H170SFG

OMO.#: OMO-DMN10H170SFG-1190

Neu und Original
DMN10H170SK3-13-79

Mfr.#: DMN10H170SK3-13-79

OMO.#: OMO-DMN10H170SK3-13-79-1190

Neu und Original
DMN10H170SK3-13

Mfr.#: DMN10H170SK3-13

OMO.#: OMO-DMN10H170SK3-13-DIODES

Darlington Transistors MOSFET 100V N-CH MOSFET 100V 12A
DMN10H170SFG-13

Mfr.#: DMN10H170SFG-13

OMO.#: OMO-DMN10H170SFG-13-DIODES

MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
DMN10H120SFG-7

Mfr.#: DMN10H120SFG-7

OMO.#: OMO-DMN10H120SFG-7-DIODES

MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SFG-13

Mfr.#: DMN10H120SFG-13

OMO.#: OMO-DMN10H120SFG-13-DIODES

MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von DMN10H120SE-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,21 $
0,21 $
10
0,20 $
2,04 $
100
0,19 $
19,31 $
500
0,18 $
91,15 $
1000
0,17 $
171,60 $
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