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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| A2G22S251-01SR3 DISTI # A2G22S251-01SR3-ND | NXP Semiconductors | AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 250 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| A2G22S251-01SR3 DISTI # A2G22S251-01SR3 | NXP Semiconductors | RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz - Tape and Reel (Alt: A2G22S251-01SR3) RoHS: Compliant Min Qty: 250 Container: Reel | Americas - 0 |
|
| A2G22S251-01SR3 DISTI # 841-A2G22S25A3A5641 | NXP Semiconductors | RF Amplifier Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V RoHS: Compliant | 0 |
|
| A2G22S251-01SR3 DISTI # A2G22S251-01SR3 | NXP Semiconductors | RF POWER TRANSISTOR RoHS: Compliant | 138 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: A2G22S251-01SR3 OMO.#: OMO-A2G22S251-01SR3 |
RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP |
|
Mfr.#: A2G22S251-01SR3 |
RF Amplifier AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V |
|
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Mfr.#: A2G22S251 OMO.#: OMO-A2G22S251-1190 |
Neu und Original |
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Mfr.#: A2G22S251-01S OMO.#: OMO-A2G22S251-01S-1190 |
Neu und Original |
