A2G22S251

A2G22S251
Mfr. #:
A2G22S251
Hersteller:
NXP Semiconductors
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A2G22S251 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
A2G22S2, A2G22, A2G2, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
A2G22S251-01SR3
DISTI # A2G22S251-01SR3-ND
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$114.9059
A2G22S251-01SR3
DISTI # A2G22S251-01SR3
Avnet, Inc.RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz - Tape and Reel (Alt: A2G22S251-01SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$125.8900
  • 500:$120.9900
  • 1000:$116.1900
  • 1500:$111.9900
  • 2500:$109.8900
A2G22S251-01SR3
DISTI # A2G22S251-01SR3
Avnet, Inc.RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz (Alt: A2G22S251-01SR3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€116.8900
  • 10:€115.0900
  • 25:€113.0900
  • 50:€111.7900
  • 100:€110.9900
  • 500:€109.0900
  • 1000:€107.8900
A2G22S251-01SR3
DISTI # 841-A2G22S25A3A5641
NXP SemiconductorsRF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2/T3 *STANDARD MAR
RoHS: Compliant
0
  • 250:$129.5900
Bild Teil # Beschreibung
A2G22S251-01SR3

Mfr.#: A2G22S251-01SR3

OMO.#: OMO-A2G22S251-01SR3

RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3

RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
A2G26H280-04SR3

Mfr.#: A2G26H280-04SR3

OMO.#: OMO-A2G26H280-04SR3

RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
A2G22S190-01SR3

Mfr.#: A2G22S190-01SR3

OMO.#: OMO-A2G22S190-01SR3

RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3-NXP-SEMICONDUCTORS

IC TRANS RF LDMOS
A2G26H280-04SR3

Mfr.#: A2G26H280-04SR3

OMO.#: OMO-A2G26H280-04SR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER GAN TRANSISTOR
A2G22S160

Mfr.#: A2G22S160

OMO.#: OMO-A2G22S160-1190

Neu und Original
A2G26H281-04S

Mfr.#: A2G26H281-04S

OMO.#: OMO-A2G26H281-04S-1190

Neu und Original
A2G26H281-04SR3

Mfr.#: A2G26H281-04SR3

OMO.#: OMO-A2G26H281-04SR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER GAN TRANSISTOR
A2G26S160-01SR3

Mfr.#: A2G26S160-01SR3

OMO.#: OMO-A2G26S160-01SR3-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von A2G22S251 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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