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IPP60R180P7XKSA1

IPP60R180P7XKSA1
Mfr. #:
IPP60R180P7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP60R180P7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP60R180P7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
145 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
25 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
72 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
85 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPP60R180P7 SP001606038
Gewichtseinheit:
0.063493 oz
Tags
IPP60R18, IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 650 V 180 mOhm 25 nC CoolMOS™ Power Mosfet - TO-220
***ow.cn
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube
***ark
High Power_New Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Teil # Mfg. Beschreibung Aktie Preis
IPP60R180P7XKSA1
DISTI # V99:2348_17076885		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube0
  • 1000:$1.0624
  • 500:$1.0965
  • 100:$1.5648
  • 10:$1.9106
  • 1:$2.2043
IPP60R180P7XKSA1
DISTI # IPP60R180P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 18A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		488In Stock
  • 1000:$1.4605
  • 500:$1.7305
  • 100:$2.1805
  • 10:$2.6750
  • 1:$2.9500
IPP60R180P7XKSA1
DISTI # IPP60R180P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R180P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.1779
  • 502:$1.1359
  • 1002:$1.0949
  • 2500:$1.0579
  • 5000:$1.0389
IPP60R180P7XKSA1
DISTI # SP001606038		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001606038)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3619
  • 10:€1.2379
  • 25:€1.1349
  • 50:€1.0899
  • 100:€1.0479
  • 500:€1.0089
  • 1000:€0.9729
IPP60R180P7XKSA1
DISTI # 726-IPP60R180P7XKSA1		Infineon Technologies AGMOSFET
RoHS: Compliant		5441
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
  • 1000:$1.1800
IPP60R180P7XKSA1
DISTI # 2784035		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-220
RoHS: Compliant		0
  • 1000:$1.7400
  • 500:$1.8300
  • 250:$1.9300
  • 100:$2.0500
  • 10:$2.3100
  • 1:$2.4700
IPP60R180P7XKSA1
DISTI # 2784035		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-220
RoHS: Compliant		0
  • 500:£1.1100
  • 250:£1.1900
  • 100:£1.2600
  • 10:£1.5900
  • 1:£2.1100
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STTH2R06A

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DSSK70-008A

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2EDF7175FXUMA1

Mfr.#: 2EDF7175FXUMA1

OMO.#: OMO-2EDF7175FXUMA1

 Gate Drivers
CRCW12061K50FKEB

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 Thick Film Resistors - SMD 1/4watt 1.5Kohms 1%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von IPP60R180P7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,40 $
2,40 $
10
2,04 $
20,40 $
100
1,63 $
163,00 $
500
1,43 $
715,00 $
1000
1,18 $
1 180,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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