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| PartNumber | IPP60R180P7XKSA1 | IPP60R180C7XKSA1 |
| Description | MOSFET | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 18 A | 13 A |
| Rds On Drain Source Resistance | 145 mOhms | 155 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 25 nC | 24 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 72 W | 68 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Series | CoolMOS P7 | CoolMOS C7 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | 6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | 7 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 85 ns | 50 ns |
| Typical Turn On Delay Time | 14 ns | 9.3 ns |
| Part # Aliases | IPP60R180P7 SP001606038 | IPP60R180C7 SP001277624 |
| Unit Weight | 0.063493 oz | 0.211644 oz |
| Height | - | 15.65 mm |
| Length | - | 10 mm |
| Width | - | 4.4 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP60R180P7XKSA1 | MOSFET | |
| IPP60R180C7XKSA1 | MOSFET HIGH POWER_NEW | ||
| IPP60R180C7XKSA1 | MOSFET N-CH 600V 13A TO220-3 | ||
| IPP60R180P7XKSA1 | MOSFET N-CH 650V 18A TO220-3 | ||
| IPP60R180C7 | Neu und Original |