OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI9945BDY-T1-GE3

SI9945BDY-T1-GE3
Mfr. #:
SI9945BDY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET 2N-CH 60V 5.3A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI9945BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI9945BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI9945BDY-GE3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Dual Dual Drain
FET-Typ
2 N-Channel (Dual)
Leistung max
3.1W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
60V
Eingangskapazität-Ciss-Vds
665pF @ 15V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
5.3A
Rds-On-Max-Id-Vgs
58 mOhm @ 4.3A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Lade-Qg-Vgs
20nC @ 10V
Pd-Verlustleistung
2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
65 ns 15 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
4.3 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Widerstand
58 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
15 ns 20 ns
Typische-Einschaltverzögerungszeit
15 ns 10 ns
Kanal-Modus
Erweiterung
Tags
SI9945BDY-T1-G, SI9945BDY-T, SI9945BD, SI9945B, SI9945, SI994, SI99, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
***th Star Micro
Transistor MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
***ure Electronics
SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W
***ical
Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R
***C
Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC
***ark
Dual N-Channel 60-V (D-S) Mosfet Rohs Compliant: No
***i-Key
MOSFET 2N-CH 60V 5.3A 8-SOIC
***ponent Sense
NFET 60V 4.7 to 5.3A 0.058 to 0.072Oh
***ukat
2xN-Ch 60V 5,3A 2,0W 0,058R SO8
***ronik
DUAL N-CH 60V 5,3A 58mOhm SO-8
***
DUAL N-CHANNEL 60-V (D-S)
***nell
MOSFET, NN CH, 60V, 5.3A, 8SOIC; Module Configuration:Dual N Channel; Transistor Polarity:N-Channel; Current Id Max:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8
***ment14 APAC
MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI9945BDY-T1-GE3
DISTI # V72:2272_09216529		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		471
  • 250:$0.4802
  • 100:$0.4815
  • 25:$0.5858
  • 10:$0.5880
  • 1:$0.6788
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13862In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13862In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		12500In Stock
  • 2500:$0.3810
SI9945BDY-T1-GE3
DISTI # 30722949		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		471
  • 250:$0.4802
  • 100:$0.4815
  • 25:$0.5858
  • 22:$0.5880
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 127295
  • 2500:€0.6009
  • 5000:€0.4099
  • 10000:€0.3529
  • 15000:€0.3259
  • 25000:€0.3029
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI9945BDY-T1-GE3
    DISTI # SI9945BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9945BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.3539
    • 5000:$0.3439
    • 10000:$0.3299
    • 15000:$0.3209
    • 25000:$0.3119
    SI9945BDY-T1-GE3
    DISTI # 72R4255    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 72R4255)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.0900
    • 10:$0.9020
    • 25:$0.8380
    • 50:$0.7740
    • 100:$0.7100
    • 250:$0.6660
    • 500:$0.6200
    SI9945BDY-T1-GE3
    DISTI # 72R4255    		Vishay IntertechnologiesMOSFET, DUAL N CH, 60V, 5.3A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):46mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:2.5V , RoHS Compliant: Yes1093
    • 1:$1.0900
    • 10:$0.9030
    • 25:$0.8380
    • 50:$0.7740
    • 100:$0.7090
    • 250:$0.6660
    • 500:$0.6210
    SI9945BDY-T1-GE3.
    DISTI # 26AC3355    		Vishay IntertechnologiesDUAL N-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO0
    • 1:$0.3570
    • 2500:$0.3490
    • 5000:$0.3400
    • 10000:$0.3270
    SI9945BDY-T1-GE3
    DISTI # 70026454    		Vishay SiliconixMOSFET,Dual N-Ch,Vds 60V,Vgs +/- 20V,Rds(on) 46mohm,Id 5.3,SO-8,Pd 3.1W
    RoHS: Compliant    		2470
    • 1:$0.4880
    • 25:$0.4630
    • 100:$0.4390
    • 250:$0.4150
    • 500:$0.3980
    SI9945BDY-T1-GE3
    DISTI # 781-SI9945BDY-GE3    		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
    RoHS: Compliant    		11149
    • 1:$0.9000
    • 10:$0.7350
    • 100:$0.5640
    • 500:$0.4850
    • 1000:$0.3830
    • 2500:$0.3570
    • 5000:$0.3400
    • 10000:$0.3270
    SI9945BDY-T1-GE3Vishay IntertechnologiesSI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8
    RoHS: Compliant    		87500Reel
    • 2500:$0.3300
    SI9945BDY-T1-GE3
    DISTI # 7878995    		Vishay IntertechnologiesMOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, PK1140
    • 10:£0.5700
    • 30:£0.5020
    SI9945BDY-T1-GE3
    DISTI # 7878995P    		Vishay IntertechnologiesMOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, RL8590
    • 30:£0.5020
    SI9945BDYT1GE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 800
      SI9945BDY-T1-GE3
      DISTI # TMOSP9460      		Vishay IntertechnologiesDUAL N-CH 60V 5,3A 58mOhm SO-8
      RoHS: Compliant      		Stock DE - 2500Stock US - 0
      • 2500:$0.3384
      SI9945BDY-T1-GE3
      DISTI # SI9945BDY-GE3      		Vishay Intertechnologies2xN-Ch 60V 5,3A 2,0W 0,058R SO8
      RoHS: Compliant      		8350
      • 50:€0.3990
      • 100:€0.3390
      • 500:€0.3090
      • 2500:€0.2985
      SI9945BDY-T1-GE3
      DISTI # XSFP00000015511      		Vishay SiliconixSmallSignalField-EffectTransistor,5.3AI(D),60V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
      RoHS: Compliant      		679731
      • 2500:$0.7100
      • 679731:$0.6455
      SI9945BDY-T1-GE3
      DISTI # 1794822      		Vishay IntertechnologiesMOSFET, NN CH, 60V, 5.3A, 8SOIC
      RoHS: Compliant      		13365
      • 5:£0.5810
      • 25:£0.5120
      • 100:£0.4350
      • 250:£0.4050
      • 500:£0.3740
      SI9945BDY-T1-GE3
      DISTI # 1794822RL      		Vishay IntertechnologiesMOSFET, NN CH, 60V, 5.3A, 8SOIC
      RoHS: Compliant      		0
      • 1:$1.4300
      • 10:$1.1700
      • 100:$0.8930
      • 500:$0.7680
      • 1000:$0.6060
      • 2500:$0.5650
      • 5000:$0.5380
      • 10000:$0.5180
      SI9945BDY-T1-GE3
      DISTI # 1794822      		Vishay IntertechnologiesMOSFET, NN CH, 60V, 5.3A, 8SOIC
      RoHS: Compliant      		7350
      • 1:$1.4300
      • 10:$1.1700
      • 100:$0.8930
      • 500:$0.7680
      • 1000:$0.6060
      • 2500:$0.5650
      • 5000:$0.5380
      • 10000:$0.5180
      SI9945BDY-T1-GE3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
      RoHS: Compliant      		Americas - 35000
        SI9945BDY-T1-GE3.Vishay IntertechnologiesMOSFET DUAL N-CHANNEL 60-V (D-S)
        RoHS: Compliant        		Americas - 2025
        • 25:$0.4480
        SI9945BDY-T1-GE3Vishay Intertechnologies60V,5.3A,Dual N-Channel MOSFET90
        • 1:$0.6700
        • 100:$0.4700
        • 500:$0.3600
        • 1000:$0.3400
        SI9945BDY-T1-GE3
        DISTI # C1S806000594091        		Vishay IntertechnologiesMOSFETs471
        • 250:$0.4781
        • 100:$0.4795
        • 25:$0.5824
        • 10:$0.5848
        Bild Teil # Beschreibung
        SI9945BDY-T1-GE3

        Mfr.#: SI9945BDY-T1-GE3

        OMO.#: OMO-SI9945BDY-T1-GE3

        		 MOSFET 60V Vds 20V Vgs SO-8
        SI9945BDY-T1-GE3-CUT TAPE

        Mfr.#: SI9945BDY-T1-GE3-CUT TAPE

        OMO.#: OMO-SI9945BDY-T1-GE3-CUT-TAPE-1190

        		 Neu und Original
        SI9945BDY

        Mfr.#: SI9945BDY

        OMO.#: OMO-SI9945BDY-1190

        		 Neu und Original
        SI9945BDY-T1

        Mfr.#: SI9945BDY-T1

        OMO.#: OMO-SI9945BDY-T1-1190

        		 Neu und Original
        SI9945BDY-T1-E3

        Mfr.#: SI9945BDY-T1-E3

        OMO.#: OMO-SI9945BDY-T1-E3-1190

        		 Neu und Original
        SI9945BDY-T1-GE3

        Mfr.#: SI9945BDY-T1-GE3

        OMO.#: OMO-SI9945BDY-T1-GE3-VISHAY

        		 MOSFET 2N-CH 60V 5.3A 8-SOIC
        SI9945BDY-T1-GE3.

        Mfr.#: SI9945BDY-T1-GE3.

        OMO.#: OMO-SI9945BDY-T1-GE3--1190

        		 DUAL N-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von SI9945BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,42 $
        0,42 $
        10
        0,40 $
        4,01 $
        100
        0,38 $
        37,97 $
        500
        0,36 $
        179,30 $
        1000
        0,34 $
        337,50 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
        Beginnen mit
        Top