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SISS27DN-T1-GE3

SISS27DN-T1-GE3
Mfr. #:
SISS27DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS27DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS27DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
5.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
92 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
57 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
52 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
16 ns
Tags
SISS27D, SISS27, SISS2, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SISS27DN-T1-GE3 P-channel MOSFET Transistor; 23 A; 30 V; 8-Pin PowerPAK 1212
***ical
Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212-S T/R
***ure Electronics
SiSS27DN Series 30 V 50 A 57 W P-Channel Mosfet - PowerPAK® 1212-8S
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
P-Chan PowerPAK1212 BWL 30V [email protected]
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3402
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3099
  • 6000:$0.3009
  • 12000:$0.2889
  • 18000:$0.2809
  • 30000:$0.2729
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SISS27DN-T1-GE3
    DISTI # 99W9575    		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
    • 1:$0.3670
    • 5000:$0.3590
    • 10000:$0.3310
    • 20000:$0.3100
    • 30000:$0.2880
    • 50000:$0.2760
    SISS27DN-T1-GE3
    DISTI # 70459595    		Vishay SiliconixSISS27DN-T1-GE3 P-channel MOSFET Transistor,23 A,30 V,8-Pin PowerPAK 1212
    RoHS: Compliant    		0
    • 3000:$0.9590
    SISS27DN-T1-GE3
    DISTI # 78-SISS27DN-T1-GE3    		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		0
    • 1:$0.8500
    • 10:$0.6810
    • 100:$0.5170
    • 500:$0.4270
    • 1000:$0.3420
    • 3000:$0.3100
    SISS27DN-T1-GE3
    DISTI # 8141323    		Vishay IntertechnologiesTRANS MOSFET P-CH 30V 23A, PK100
    • 20:£0.1870
    • 100:£0.1840
    SISS27DN-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8SAmericas - Stock
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      Verfügbarkeit
      Aktie:
      20
      Auf Bestellung:
      2003
      Menge eingeben:
      Der aktuelle Preis von SISS27DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,84 $
      0,84 $
      10
      0,68 $
      6,80 $
      100
      0,52 $
      51,60 $
      500
      0,43 $
      213,00 $
      1000
      0,34 $
      341,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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