 | | |
| PartNumber | SISS27DN-T1-GE3 | SISS27ADN-T1-GE3 |
| Description | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 50 A | 50 A |
| Rds On Drain Source Resistance | 5.6 mOhms | 4.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 2.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | 92 nC | 117 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 57 W | 57 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel |
| Series | SIS | SIS |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 52 S | 57 S |
| Fall Time | 10 ns | 22 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5 ns | 35 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 65 ns | 38 ns |
| Typical Turn On Delay Time | 16 ns | 48 ns |
| Height | - | 1.04 mm |
| Length | - | 3.3 mm |
| Width | - | 3.3 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISS27DN-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S | |
| SISS27ADN-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S | ||
Vishay |
SISS27DN-T1-GE3 | IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III | |
| SISS27ADN-T1-GE3 | MOSFET P-CH 30V 50A POWERPAK1212 | ||
| SISS27DN | Neu und Original | ||
| SISS27DN-T1-G3 | Neu und Original |