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SISS27DN-T1-GE3

SISS27DN-T1-GE3
Mfr. #:
SISS27DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS27DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS27DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
SISxxxDN
Verpackung
Spule
Montageart
SMD/SMT
Handelsname
TrenchFET Leistungs-MOSFET
Paket-Koffer
PowerPAK-1212-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
57 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
20 ns
Anstiegszeit
45 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
- 50 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 1 V to - 2.2 V
Rds-On-Drain-Source-Widerstand
5.6 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
50 ns
Typische-Einschaltverzögerungszeit
60 ns
Qg-Gate-Ladung
45 nC
Vorwärts-Transkonduktanz-Min
52 S
Kanal-Modus
Erweiterung
Tags
SISS27D, SISS27, SISS2, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3402
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3099
  • 6000:$0.3009
  • 12000:$0.2889
  • 18000:$0.2809
  • 30000:$0.2729
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SISS27DN-T1-GE3
    DISTI # 99W9575    		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
    • 1:$0.3670
    • 5000:$0.3590
    • 10000:$0.3310
    • 20000:$0.3100
    • 30000:$0.2880
    • 50000:$0.2760
    SISS27DN-T1-GE3
    DISTI # 70459595    		Vishay SiliconixSISS27DN-T1-GE3 P-channel MOSFET Transistor,23 A,30 V,8-Pin PowerPAK 1212
    RoHS: Compliant    		0
    • 3000:$0.9590
    SISS27DN-T1-GE3
    DISTI # 78-SISS27DN-T1-GE3    		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		0
    • 1:$0.8500
    • 10:$0.6810
    • 100:$0.5170
    • 500:$0.4270
    • 1000:$0.3420
    • 3000:$0.3100
    SISS27DN-T1-GE3
    DISTI # 8141323    		Vishay IntertechnologiesTRANS MOSFET P-CH 30V 23A, PK100
    • 20:£0.1870
    • 100:£0.1840
    SISS27DN-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8SAmericas - Stock
      Bild Teil # Beschreibung
      SISS27DN-T1-GE3

      Mfr.#: SISS27DN-T1-GE3

      OMO.#: OMO-SISS27DN-T1-GE3

      		 MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
      SISS27DN-T1-GE3

      Mfr.#: SISS27DN-T1-GE3

      OMO.#: OMO-SISS27DN-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
      SISS27DN

      Mfr.#: SISS27DN

      OMO.#: OMO-SISS27DN-1190

      		 Neu und Original
      SISS27DN-T1-G3

      Mfr.#: SISS27DN-T1-G3

      OMO.#: OMO-SISS27DN-T1-G3-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von SISS27DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,41 $
      0,41 $
      10
      0,39 $
      3,89 $
      100
      0,37 $
      36,84 $
      500
      0,35 $
      173,95 $
      1000
      0,33 $
      327,50 $
      Beginnen mit
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