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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FQI7N60TU DISTI # V36:1790_06359420 | ON Semiconductor | AT | 0 |
|
| FQI7N60TU DISTI # FQI7N60TU-ND | ON Semiconductor | MOSFET N-CH 600V 7.4A I2PAK Min Qty: 1000 Container: Tube | Temporarily Out of Stock |
|
| FQI7N60TU DISTI # 26743330 | ON Semiconductor | AT | 2000 |
|
| FQI7N60TU DISTI # FQI7N60TU | ON Semiconductor | Trans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) I2PAK T/R - Rail/Tube (Alt: FQI7N60TU) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| FQI7N60TU DISTI # FQI7N60TU | ON Semiconductor | Trans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) I2PAK T/R - Bulk (Alt: FQI7N60TU) RoHS: Compliant Min Qty: 348 Container: Bulk | Americas - 0 | |
| FQI7N60TU. DISTI # 96AC0081 | ON Semiconductor | QF 600V 1.0OHM I2PAK ROHS COMPLIANT: YES RoHS: Compliant | 0 |
|
| FQI7N60TU DISTI # 82C4195 | ON Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,7.4A I(D),TO-262AA ROHS COMPLIANT: YES RoHS: Compliant | 0 |
|
| FQI7N60TU DISTI # 512-FQI7N60TU | ON Semiconductor | MOSFET 600V N-Channel QFET RoHS: Compliant | 1000 |
|
| FQI7N60TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 3568 |
|
| FQI7N60 | ISC | I²PAK/TO-262 | 5000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: FQI7N60TU OMO.#: OMO-FQI7N60TU |
MOSFET 600V N-Channel QFET |
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Mfr.#: FQI7N10TU OMO.#: OMO-FQI7N10TU |
MOSFET N-CH/100V/7.3A/0.35OHM |
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Mfr.#: FQI70N08 OMO.#: OMO-FQI70N08-1190 |
Neu und Original |
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Mfr.#: FQI70N10 OMO.#: OMO-FQI70N10-1190 |
Neu und Original |
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Mfr.#: FQI7N10 OMO.#: OMO-FQI7N10-1190 |
Neu und Original |
|
Mfr.#: FQI7N10LTU |
MOSFET N-CH 100V 7.3A I2PAK |
|
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Mfr.#: FQI7N60 OMO.#: OMO-FQI7N60-1190 |
Neu und Original |
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Mfr.#: FQI7N60,FQI47P06 OMO.#: OMO-FQI7N60-FQI47P06-1190 |
Neu und Original |
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Mfr.#: FQI7N80 OMO.#: OMO-FQI7N80-1190 |
Neu und Original |
|
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Mfr.#: FQI7P06TU |
MOSFET P-CH 60V 7A I2PAK |