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FQI7N60TU

FQI7N60TU
Mfr. #:
FQI7N60TU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQI7N60TU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
7.4 A
Rds On - Drain-Source-Widerstand:
1 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
7.88 mm
Länge:
10.29 mm
Serie:
FQI7N60
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.83 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
6.4 S
Abfallzeit:
60 ns
Produktart:
MOSFET
Anstiegszeit:
80 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
30 ns
Teil # Aliase:
FQI7N60TU_NL
Gewichtseinheit:
0.073511 oz
Tags
FQI7N6, FQI7N, FQI7, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK
***ical
Trans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) I2PAK Rail
***ark
Qf 600V 1.0Ohm I2Pak Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQI7N60TU
DISTI # 26743330		ON SemiconductorAT2000
  • 1000:$1.1370
FQI7N60TU
DISTI # FQI7N60TU-ND		ON SemiconductorMOSFET N-CH 600V 7.4A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.1365
FQI7N60TU
DISTI # V36:1790_06359420		ON SemiconductorAT0
  • 1000000:$0.7561
  • 500000:$0.7581
  • 100000:$0.8900
  • 10000:$1.1020
  • 1000:$1.1370
FQI7N60TU
DISTI # FQI7N60TU		ON SemiconductorTrans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) I2PAK T/R (Alt: FQI7N60TU)
RoHS: Not Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.8549
  • 500:€0.8679
  • 100:€0.8809
  • 50:€0.8949
  • 25:€0.9859
  • 10:€1.1539
  • 1:€1.4109
FQI7N60TU
DISTI # FQI7N60TU		ON SemiconductorTrans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) I2PAK T/R - Bulk (Alt: FQI7N60TU)
RoHS: Compliant
Min Qty: 302
Container: Bulk		Americas - 0
  • 3020:$1.0239
  • 1510:$1.0499
  • 906:$1.0639
  • 604:$1.0769
  • 302:$1.0839
FQI7N60TU
DISTI # FQI7N60TU		ON SemiconductorTrans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) I2PAK T/R - Rail/Tube (Alt: FQI7N60TU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.8009
  • 6000:$0.8209
  • 4000:$0.8319
  • 2000:$0.8419
  • 1000:$0.8479
FQI7N60TU
DISTI # 82C4195		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,7.4A I(D),TO-262AA ROHS COMPLIANT: YES0
  • 10000:$1.1900
  • 2500:$1.2400
  • 1000:$1.3400
  • 500:$1.6000
  • 100:$1.8200
  • 10:$2.2400
  • 1:$2.7600
FQI7N60TU.
DISTI # 96AC0081		ON SemiconductorQF 600V 1.0OHM I2PAK ROHS COMPLIANT: YES0
  • 10000:$1.1900
  • 2500:$1.2400
  • 1000:$1.3400
  • 500:$1.6000
  • 100:$1.8200
  • 10:$2.2400
  • 1:$2.7600
FQI7N60TU
DISTI # 512-FQI7N60TU		ON SemiconductorMOSFET 600V N-Channel QFET
RoHS: Compliant		1000
  • 1:$2.1900
  • 10:$1.8600
  • 100:$1.4900
  • 500:$1.3000
  • 1000:$1.0800
  • 2000:$1.0000
  • 5000:$0.9700
FQI7N60TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		3568
  • 1000:$0.9500
  • 500:$1.0000
  • 100:$1.0400
  • 25:$1.0800
  • 1:$1.1700
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OMO.#: OMO-FQI70N08-1190

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Mfr.#: FQI7N10

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Mfr.#: FQI7N10LTUFSC

OMO.#: OMO-FQI7N10LTUFSC-1190

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Mfr.#: FQI7N20L

OMO.#: OMO-FQI7N20L-1190

 Neu und Original
FQI7N60TU

Mfr.#: FQI7N60TU

OMO.#: OMO-FQI7N60TU-ON-SEMICONDUCTOR

 MOSFET N-CH 600V 7.4A I2PAK
FQI7P06

Mfr.#: FQI7P06

OMO.#: OMO-FQI7P06-1190

 Neu und Original
FQI7P06TU

Mfr.#: FQI7P06TU

OMO.#: OMO-FQI7P06TU-ON-SEMICONDUCTOR

 MOSFET P-CH 60V 7A I2PAK
FQI7P20

Mfr.#: FQI7P20

OMO.#: OMO-FQI7P20-1190

 Neu und Original
FQI7N10TU

Mfr.#: FQI7N10TU

OMO.#: OMO-FQI7N10TU-ON-SEMICONDUCTOR

 MOSFET N-CH 100V 7.3A I2PAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FQI7N60TU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,19 $
2,19 $
10
1,86 $
18,60 $
100
1,49 $
149,00 $
500
1,30 $
650,00 $
1000
1,08 $
1 080,00 $
2000
1,00 $
2 000,00 $
5000
0,97 $
4 850,00 $
10000
0,93 $
9 330,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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