FQI7N60TU vs FQI7N60 vs FQI7N60,FQI47P06

 
PartNumberFQI7N60TUFQI7N60FQI7N60,FQI47P06
DescriptionMOSFET 600V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current7.4 A--
Rds On Drain Source Resistance1 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
SeriesFQI7N60--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6.4 S--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time80 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns--
Typical Turn On Delay Time30 ns--
Part # AliasesFQI7N60TU_NL--
Unit Weight0.073511 oz--
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