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SIJ470DP-T1-GE3

SIJ470DP-T1-GE3
Mfr. #:
SIJ470DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIJ470DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIJ470DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay / Siliconix
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
Leistungs-MOSFET
Verpackung
Spule
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Handelsname
ThunderFET TrenchFET
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
56.8 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
7 ns
Anstiegszeit
8 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
58.8 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Rds-On-Drain-Source-Widerstand
9.1 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
22 ns
Typische-Einschaltverzögerungszeit
12 ns
Qg-Gate-Ladung
36.9 nC
Kanal-Modus
Erweiterung
Tags
SIJ470, SIJ47, SIJ4, SIJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 100V 17.4A 5-Pin(4+Tab) PowerPAK SO
***i-Key
MOSFET N-CH 100V 58.8A PPAK SO-8
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7238
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIJ470DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.6839
  • 12000:$0.6629
  • 18000:$0.6359
  • 30000:$0.6189
  • 60000:$0.6019
SIJ470DP-T1-GE3
DISTI # 78-SIJ470DP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
RoHS: Compliant		4267
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7850
  • 3000:$0.7840
SIJ470DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor
RoHS: Compliant		Europe - 6000
    SIJ470DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
    RoHS: Compliant    		Americas -
    • 3000:$0.6580
    • 12000:$0.5920
    Bild Teil # Beschreibung
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3

    		 MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP

    Mfr.#: SIJ470DP

    OMO.#: OMO-SIJ470DP-1190

    		 Neu und Original
    SIJ470DPT1GE3

    Mfr.#: SIJ470DPT1GE3

    OMO.#: OMO-SIJ470DPT1GE3-1190

    		 Power Field-Effect Transisto
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von SIJ470DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,89 $
    0,89 $
    10
    0,84 $
    8,44 $
    100
    0,80 $
    79,92 $
    500
    0,75 $
    377,40 $
    1000
    0,71 $
    710,40 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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