 |  |  | |
| PartNumber | SIJ186DP-T1-GE3 | SIJ188DP-T1-GE3 | SIJ400DP-T1-GE3 |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8L | MOSFET 60V Vds; 20V Vgs PowerPAK SO-8L | MOSFET RECOMMENDED ALT 781-SIR466DP-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-5 | PowerPAK SO-8 | PowerPAK-SO-8L-4 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 79.4 A | 92.4 A | - |
| Rds On Drain Source Resistance | 4.5 mOhms | 3.85 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 24.5 nC | 44 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 57 W | 65.7 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIJ | SIJ | SIJ |
| Transistor Type | 1 N-Channel TrenchFET Power MOSFET | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 54 S | 41 S | - |
| Fall Time | 9 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 6 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 22 ns | - |
| Typical Turn On Delay Time | 10 ns | 13 ns | - |
| Height | - | - | 1.04 mm |
| Length | - | - | 6.15 mm |
| Width | - | - | 5.13 mm |
| Part # Aliases | - | - | SIJ400DP-GE3 |
| Unit Weight | - | - | 0.017870 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIJ186DP-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8L | |
| SIJ438DP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | ||
| SIJ494DP-T1-GE3 | MOSFET N-Ch 150V Vds 16.1nC Qg Typ | ||
| SIJ462DP-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8L | ||
| SIJ470DP-T1-GE3 | MOSFET 100V 9.1mOhm@10V 58.8A N-CH | ||
| SIJ478DP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8L | ||
| SIJ482DP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8L | ||
| SIJ438ADP-T1-GE3 | MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L | ||
| SIJ188DP-T1-GE3 | MOSFET 60V Vds; 20V Vgs PowerPAK SO-8L | ||
| SIJ484DP-T1-GE3 | MOSFET | ||
| SIJ400DP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIR466DP-T1-GE3 | ||
| SIJ420DP-T1-GE3 | MOSFET N-CHANNEL 20-V (D-S) MOSFET | ||
Vishay |
SIJ470DP-T1-GE3 | IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH | |
| SIJ478DP-T1-GE3 | RF Bipolar Transistors MOSFET 80V 8.0mOhm@10V 60A N-CH | ||
| SIJ458DP-T1-GE3 | RF Bipolar Transistors MOSFET 30V 60A 69.4W | ||
| SIJ420DP-T1-GE3 | RF Bipolar Transistors MOSFET N-CHANNEL 20-V (D-S) MOSFET | ||
| SIJ462DP-T1-GE3 | RF Bipolar Transistors MOSFET 60V 8.0mOhm@10V 46.5A N-CH | ||
| SIJ800DP-T1-GE3 | RF Bipolar Transistors MOSFET 40V 9.5mohm @ 10V | ||
| SIJ438ADP-T1-GE3 | MOSFET N-CHAN 40-V POWERPAK SO-8 | ||
| SIJ494DP-T1-GE3 | MOSFET N-CH 150V 36.8A SO-8 | ||
| SIJ400DP-T1-GE3 | MOSFET N-CH 30V 32A PPAK SO-8 | ||
| SIJ438DP-T1-GE3 | MOSFET N-CH 40V 80A PPAK SO-8L | ||
| SIJ482DP-T1-GE3 | MOSFET N-CH 80V 60A PPAK SO-8 | ||
| SIJ484DP-T1-GE3 | MOSFET N-CH 30V 35A PPAK SO-8 | ||
| SIJ186DP-T1-GE3 | N-Channel 60-V (D-S) MOSFET PowerPAK SO-8L 250M SG 2 mil , 4.5 m @ 10V 4.3 m @ 7.5V m @ 4.5V | ||
| SIJ188DP-T1-GE3 | N-Channel 60-V (D-S) MOSFET PowerPAK SO-8L 250M SG 2 mil , 3.85 m @ 10V 3.8 m @ 7.5V m @ 4.5V | ||
| SIJ | Neu und Original | ||
| SIJ-050W11 | Neu und Original | ||
| SIJ392 | Neu und Original | ||
| SIJ400 | Neu und Original | ||
| SIJ400DP | Neu und Original | ||
| SIJ42ODP-T1-GE3 | Neu und Original | ||
| SIJ438DP | Neu und Original | ||
| SIJ438DPT1GE3 | Power Field-Effect Transisto | ||
| SIJ458DP-T1 | Neu und Original | ||
| SIJ458DP-T1-E3 | Neu und Original | ||
| SIJ461DP-T1-GE3 | Neu und Original | ||
| SIJ470DP | Neu und Original | ||
| SIJ470DPT1GE3 | Power Field-Effect Transisto | ||
| SIJ478DP | Neu und Original | ||
| SIJ478DP-T1-E3 | Neu und Original | ||
| SIJ478DPT1GE3 | Power Field-Effect Transistor, 60A I(D), 80V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIJ482DP | Neu und Original | ||
| SIJ482DPT1GE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| SIJ50-1R5K-TR | Neu und Original | ||
| SIJ800DP | Neu und Original | ||
| SIJ800DP-GE3 | Neu und Original | ||
| SIJ800DP-T1-E3 | Neu und Original | ||
| SIJ848DP | Neu und Original | ||
| SIJ900DP | Neu und Original |