OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

STU6NF10

STU6NF10
Mfr. #:
STU6NF10
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch, 100V-0.22ohms 6A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STU6NF10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STU6NF10 DatasheetSTU6NF10 Datasheet (P4-P6)STU6NF10 Datasheet (P7-P9)STU6NF10 Datasheet (P10-P12)STU6NF10 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
STU6NF10 Mehr Informationen STU6NF10 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
250 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
30 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StripFET
Verpackung:
Rohr
Serie:
STU6NF10
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
6 ns
Gewichtseinheit:
0.139332 oz
Tags
STU6N, STU6, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 100V 6A IPAK
***r Electronics
Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***ark
N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
***ure Electronics
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***SIT Distribution GmbH
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
***ment14 APAC
MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 32W 28ns
***Yang
Trans MOSFET N-CH 100V 8.4A 3-Pin(3+Tab) IPAK Rail - Bulk
***inecomponents.com
N-CH/100V/8.4A/0.2OHM/Substitute of IRFU120TU & IRFU120A
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.4A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
***ark
MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
***r Electronics
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
***ineon SCT
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N-CH, 100V, 4.3A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STU6NF10
DISTI # V36:1790_06567881		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R
RoHS: Compliant		0
    STU6NF10
    DISTI # 497-12700-5-ND    		STMicroelectronicsMOSFET N-CH 100V 6A IPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		655In Stock
    • 5025:$0.5077
    • 2550:$0.5344
    • 525:$0.7252
    • 150:$0.8779
    • 75:$1.0688
    • 10:$1.1260
    • 1:$1.2600
    STU6NF10
    DISTI # STU6NF10    		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 75
    Container: Tape and Reel    		Europe - 0
    • 750:€0.1969
    • 450:€0.2259
    • 300:€0.2599
    • 150:€0.3189
    • 75:€0.3999
    STU6NF10
    DISTI # STU6NF10    		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R - Rail/Tube (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube    		Americas - 0
    • 30000:$0.4429
    • 15000:$0.4519
    • 9000:$0.4729
    • 6000:$0.4949
    • 3000:$0.5199
    STU6NF10
    DISTI # 57P2563    		STMicroelectronicsPTD LOW VOLTAGE0
    • 10000:$0.4520
    • 2500:$0.4650
    • 1000:$0.5760
    • 500:$0.6600
    • 100:$0.7460
    • 10:$0.9720
    • 1:$1.1400
    STU6NF10
    DISTI # 511-STU6NF10    		STMicroelectronicsMOSFET N-Ch, 100V-0.22ohms 6A
    RoHS: Compliant    		3085
    • 1:$1.1400
    • 10:$0.9720
    • 100:$0.7470
    • 500:$0.6600
    • 1000:$0.5210
    • 3000:$0.4620
    • 9000:$0.4450
    Bild Teil # Beschreibung
    AD5272BRMZ-20-RL7

    Mfr.#: AD5272BRMZ-20-RL7

    OMO.#: OMO-AD5272BRMZ-20-RL7

    		 Digital Potentiometer ICs 1024p 5v SGL CHI2C 50-TP Mem Digi Rstat
    ADUM110N1BRZ

    Mfr.#: ADUM110N1BRZ

    OMO.#: OMO-ADUM110N1BRZ

    		 Digital Isolators 2 Channel 3kV Digital Isolator
    2N2906A

    Mfr.#: 2N2906A

    OMO.#: OMO-2N2906A

    		 Bipolar Transistors - BJT PNP Gen Pur SS
    SF-0603HI450M-2

    Mfr.#: SF-0603HI450M-2

    OMO.#: OMO-SF-0603HI450M-2

    		 Surface Mount Fuses 4.5A Slow Blow 0603 SinglFuse
    AD5272BRMZ-20-RL7

    Mfr.#: AD5272BRMZ-20-RL7

    OMO.#: OMO-AD5272BRMZ-20-RL7-ANALOG-DEVICES-INC-ADI

    		 Digital Potentiometer ICs 1024p 5v SGL CHI2C 50-TP Mem Digi Rstat
    STU10P6F6

    Mfr.#: STU10P6F6

    OMO.#: OMO-STU10P6F6-STMICROELECTRONICS

    		 MOSFET P-CH 60V 10A IPAK
    ADUM110N1BRZ

    Mfr.#: ADUM110N1BRZ

    OMO.#: OMO-ADUM110N1BRZ-ANALOG-DEVICES-INC-ADI

    		 Digital Isolators 2 Channel 3kV Digital Isolato
    2N2906A

    Mfr.#: 2N2906A

    OMO.#: OMO-2N2906A-ON-SEMICONDUCTOR

    		 PNP SS GP AMP MED PWR TRANS.
    RK73H1JTTD4702F

    Mfr.#: RK73H1JTTD4702F

    OMO.#: OMO-RK73H1JTTD4702F-1090

    		 Thick Film Resistors - SMD 1/10watts 47Kohms 1%
    HMU2103NL

    Mfr.#: HMU2103NL

    OMO.#: OMO-HMU2103NL-PULSE-ELECTRONICS

    		 XFMR CMC MODULE AECQ BATT MNGT
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von STU6NF10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,14 $
    1,14 $
    10
    0,97 $
    9,72 $
    100
    0,75 $
    74,70 $
    500
    0,66 $
    330,00 $
    1000
    0,52 $
    521,00 $
    3000
    0,46 $
    1 386,00 $
    9000
    0,44 $
    4 005,00 $
    24000
    0,43 $
    10 344,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • LD56050 Ultra-Low Dropout Linear Regulator
      LD56050 Ultra-Low Dropout Linear Regulator
      STMicro's LD56050 linear regulator includes thermal protection, maximum space-saving package, and is suitable for low power, battery-operated applications.
    • Automotive-Grade Rectifiers
      Automotive-Grade Rectifiers
      STMicroelectronics offers a large number of rectifiers that meet AEC-Q101 standards as well as strict international automotive quality requirements.
    • Electronic Fuses
      Electronic Fuses
      STMicroelectronics' E-Fuses are a hot-swap power management IC that can reduce maintenance costs and improve equipment uptime and availability.
    • Compare STU6NF10
      Compare STU6NF10
      STU6N60DM2 vs STU6N60M2 vs STU6N62
    • Easy-to-Use Teseo-LIV3F GNSS Module
      Easy-to-Use Teseo-LIV3F GNSS Module
      STMicro's Teseo-LIV3F module is an easy-to-use global navigation satellite system (GNSS) standalone module.
    • SPC58 Automotive General Purpose MCU with Networki
      SPC58 Automotive General Purpose MCU with Networki
      STMicroelectronics' SPC58 automotive microcontrollers offer a unique scalability ideal for long-term platform development strategy of automotive customers.
    More Newest Products
    Top