FCH125N60E

FCH125N60E
Mfr. #:
FCH125N60E
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCH125N60E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCH125N60E Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
125 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V, 30 V
Qg - Gate-Ladung:
78 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
278 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET II
Verpackung:
Rohr
Höhe:
20.82 mm
Länge:
15.87 mm
Serie:
FCH125N60E
Transistortyp:
1 N-Channel
Breite:
4.82 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
23 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
106 ns
Typische Einschaltverzögerungszeit:
23 ns
Gewichtseinheit:
0.225401 oz
Tags
FCH12, FCH1, FCH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 60V 29A
***i-Key
MOSFET N-CH 600V TO247
***ark
SF2 600V 125MOHM E TO247 / TUBE
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:278W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 29A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.102ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FCH125N60E
DISTI # V36:1790_14141238
ON SemiconductorSUPERFET2 600V 125MOHM SLOW VE0
  • 450000:$1.7580
  • 225000:$1.7620
  • 45000:$2.1270
  • 4500:$2.8150
  • 450:$2.9320
FCH125N60E
DISTI # V99:2348_14141238
ON SemiconductorSUPERFET2 600V 125MOHM SLOW VE0
    FCH125N60E
    DISTI # FCH125N60E-ND
    ON SemiconductorMOSFET N-CH 600V 29A TO247
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Temporarily Out of Stock
    • 450:$2.9320
    FCH125N60E
    DISTI # FCH125N60E
    ON SemiconductorSUPERFET2 600V 125MOHM SLOW VERSION - Bulk (Alt: FCH125N60E)
    Min Qty: 140
    Container: Bulk
    Americas - 0
    • 420:$2.1900
    • 700:$2.1900
    • 1400:$2.1900
    • 140:$2.2900
    • 280:$2.2900
    FCH125N60E
    DISTI # FCH125N60E
    ON SemiconductorSUPERFET2 600V 125MOHM SLOW VERSION - Rail/Tube (Alt: FCH125N60E)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Americas - 0
    • 4500:$1.7900
    • 450:$1.8900
    • 900:$1.8900
    • 1800:$1.8900
    • 2700:$1.8900
    FCH125N60E
    DISTI # 512-FCH125N60E
    ON SemiconductorMOSFET 600V 29A N-Chnl SuperFET Easy-Drive
    RoHS: Compliant
    472
    • 1:$3.9900
    • 10:$3.3900
    • 100:$2.9400
    • 250:$2.7900
    • 500:$2.5000
    • 1000:$2.1100
    • 2500:$2.0000
    FCH125N60EFairchild Semiconductor Corporation 
    RoHS: Not Compliant
    324
    • 1000:$2.2100
    • 500:$2.3300
    • 100:$2.4200
    • 25:$2.5300
    • 1:$2.7200
    FCH125N60E
    DISTI # 2565213
    ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-247-30
    • 500:£1.8100
    • 250:£2.0200
    • 100:£2.1400
    • 10:£2.4600
    • 1:£3.2300
    FCH125N60E
    DISTI # 2565213
    ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-247-3
    RoHS: Compliant
    0
    • 1350:$4.6400
    • 900:$4.9600
    • 450:$6.1200
    • 10:$8.2700
    • 1:$9.2600
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    Verfügbarkeit
    Aktie:
    472
    Auf Bestellung:
    2455
    Menge eingeben:
    Der aktuelle Preis von FCH125N60E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,99 $
    3,99 $
    10
    3,39 $
    33,90 $
    100
    2,94 $
    294,00 $
    250
    2,79 $
    697,50 $
    500
    2,50 $
    1 250,00 $
    1000
    2,11 $
    2 110,00 $
    2500
    2,00 $
    5 000,00 $
    5000
    1,93 $
    9 650,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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