SISS67DN-T1-GE3

Mfr. #:: SISS67DN-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SISS67DN-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SISS67DN-T1-GE3 Datasheet SISS67DN-T1-GE3 Datasheet (P4-P6)SISS67DN-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:: SISS67DN-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-1212-8S-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 60 A

Rds On - Drain-Source-Widerstand:: 4.6 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 25 V

Qg - Gate-Ladung:: 74 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 65.8 W

Aufbau:: Single

Handelsname:: TrenchFET, PowerPAK

Verpackung:: Spule

Serie:: SIS

Marke:: Vishay / Siliconix

Abfallzeit:: 18 ns

Produktart:: MOSFET

Anstiegszeit:: 25 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 35 ns

Typische Einschaltverzögerungszeit:: 20 ns

Tags: SISS6, SISS, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS67DN-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SISS67DN-T1-GE3 DISTI # SISS67DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CHAN 30V POWERPAK 1212- RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8958In Stock	1000:$0.5147 500:$0.6520 100:$0.7893 10:$1.0120 1:$1.1300
SISS67DN-T1-GE3 DISTI # SISS67DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CHAN 30V POWERPAK 1212- RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8958In Stock	1000:$0.5147 500:$0.6520 100:$0.7893 10:$1.0120 1:$1.1300
SISS67DN-T1-GE3 DISTI # SISS67DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CHAN 30V POWERPAK 1212- RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.4264 6000:$0.4431 3000:$0.4664
SISS67DN-T1-GE3 DISTI # SISS67DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH -30V -60A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS67DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.4059 30000:$0.4179 18000:$0.4289 12000:$0.4479 6000:$0.4609
SISS67DN-T1-GE3 DISTI # SISS67DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH -30V -60A 8-Pin PowerPAK 1212 (Alt: SISS67DN-T1-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.4429 500:€0.4489 100:€0.4569 50:€0.4629 25:€0.5239 10:€0.6459 1:€0.9009
SISS67DN-T1-GE3 DISTI # 81AC3506	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	10000:$0.4030 6000:$0.4130 4000:$0.4290 2000:$0.4760 1000:$0.5240 1:$0.5460
SISS67DN-T1-GE3 DISTI # 78AC6533	Vishay Intertechnologies	MOSFET, P-CH, -30V, -60A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes	6000	500:$0.6090 250:$0.6590 100:$0.7090 50:$0.7800 25:$0.8520 10:$0.9230 1:$1.1200
SISS67DN-T1-GE3 DISTI # 78-SISS67DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S RoHS: Compliant	5177	1:$1.1100 10:$0.9140 100:$0.7020 500:$0.6030 1000:$0.4760 3000:$0.4450
SISS67DN-T1-GE3 DISTI # 2932963	Vishay Intertechnologies	MOSFET, P-CH, -30V, -60A, 150DEG C RoHS: Compliant	6000	1000:$0.7390 500:$0.7810 250:$0.9180 100:$1.1200 10:$1.4300 1:$1.7200
SISS67DN-T1-GE3 DISTI # 2932963	Vishay Intertechnologies	MOSFET, P-CH, -30V, -60A, 150DEG C	6000	500:£0.4370 250:£0.4730 100:£0.5090 10:£0.7150 1:£0.9190

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von SISS67DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,11 $~~; ~~1,11 $~~

10: ~~0,91 $~~; ~~9,14 $~~

100: ~~0,70 $~~; ~~70,20 $~~

500: ~~0,60 $~~; ~~301,50 $~~

1000: ~~0,48 $~~; ~~476,00 $~~

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SISS67DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes