FDN359BN

FDN359BN
Mfr. #:
FDN359BN
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 30V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDN359BN Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDN359BN Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SSOT-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
2.7 A
Rds On - Drain-Source-Widerstand:
46 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
500 mW (1/2 W)
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.12 mm
Länge:
2.9 mm
Produkt:
MOSFET Kleinsignal
Serie:
FDN359BN
Transistortyp:
1 N-Channel
Breite:
1.4 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
7 ns
Gewichtseinheit:
0.001058 oz
Tags
FDN359B, FDN359, FDN35, FDN3, FDN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN359BN
***Semiconductor
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.7A, 46mΩ
***ure Electronics
N-Channel 30 V 0.046 Ohm Logic Level PowerTrench Mosfet SSOT-3
***p One Stop Global
Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R
*** Source Electronics
N-Channel Logic Level PowerTrench TM MOSFET
***ser
MOSFETs 30V N-Channel PowerTrench MOSFET
***inecomponents.com
SSOT3, NCH, LOGIC LEVEL POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 30V 2.7A 3SSOT
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:2.7mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.046ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V
***ment14 APAC
N CHANNEL MOSFET, 30V, 2.7mA; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***nell
MOSFET, CA-N, 30V 2,7A, SUPERSOT-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.7A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.026ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:500mW; Modello Case Transistor:SuperSOT; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDN359BN
DISTI # V72:2272_07705575
ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER4990
  • 3000:$0.1140
  • 1000:$0.1321
  • 500:$0.1529
  • 250:$0.1699
  • 100:$0.1767
  • 25:$0.2924
  • 10:$0.3249
  • 1:$0.4275
FDN359BN
DISTI # FDN359BNOSCT-ND
ON SemiconductorMOSFET N-CH 30V 2.7A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10252In Stock
  • 1000:$0.1572
  • 500:$0.2096
  • 100:$0.3057
  • 10:$0.4450
  • 1:$0.5700
FDN359BN
DISTI # FDN359BNOSDKR-ND
ON SemiconductorMOSFET N-CH 30V 2.7A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10252In Stock
  • 1000:$0.1572
  • 500:$0.2096
  • 100:$0.3057
  • 10:$0.4450
  • 1:$0.5700
FDN359BN
DISTI # FDN359BNOSTR-ND
ON SemiconductorMOSFET N-CH 30V 2.7A SSOT3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.1399
FDN359BN
DISTI # 19877647
ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER27000
  • 3000:$0.0736
FDN359BN
DISTI # 30677137
ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER18000
  • 3000:$0.1390
FDN359BN
DISTI # 29055638
ON SemiconductorSSOT3, NCH, LOGIC LEVEL POWER4990
  • 3000:$0.1140
  • 1000:$0.1321
  • 500:$0.1529
  • 250:$0.1699
  • 100:$0.1767
  • 75:$0.2924
FDN359BN
DISTI # FDN359BN
ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R (Alt: FDN359BN)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 3000
  • 3000:€0.1659
  • 6000:€0.1289
  • 12000:€0.1059
  • 18000:€0.0889
  • 30000:€0.0829
FDN359BN
DISTI # FDN359BN
ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN359BN)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 6000:$0.0909
  • 12000:$0.0909
  • 18000:$0.0899
  • 30000:$0.0889
  • 60000:$0.0859
FDN359BN
DISTI # FDN359BN
ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R (Alt: FDN359BN)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    FDN359BN_F095
    DISTI # FDN359BN-F095
    ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R (Alt: FDN359BN-F095)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
      FDN359BN_F095
      DISTI # FDN359BN-F095
      ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R (Alt: FDN359BN-F095)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
        FDN359BN
        DISTI # 04M9100
        ON SemiconductorN CHANNEL MOSFET, 30V, 2.7mA, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes0
        • 1:$0.1040
        • 9000:$0.1010
        • 24000:$0.0970
        FDN359BN
        DISTI # 46AC0805
        ON SemiconductorMOSFET, N-CH, 30V, 2.7A, SUPERSOT-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes12728
        • 1:$0.4500
        • 10:$0.3420
        • 25:$0.2900
        • 50:$0.2380
        • 100:$0.1860
        • 250:$0.1700
        • 500:$0.1550
        • 1000:$0.1390
        FDN359BN
        DISTI # 6710453P
        ON SemiconductorMOSFET N-CHANNEL 30V 2.7A SUPERSOT3, RL16175
        • 100:£0.0940
        • 200:£0.0900
        FDN359BN
        DISTI # 6710453
        ON SemiconductorMOSFET N-CHANNEL 30V 2.7A SUPERSOT3, PK1010
        • 5:£0.4000
        • 100:£0.0940
        • 200:£0.0900
        FDN359BN
        DISTI # C1S226600700223
        ON SemiconductorTrans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R27000
        • 12000:$0.0958
        • 6000:$0.1150
        • 3000:$0.1250
        FDN359BN
        DISTI # XSFP00000136571
        Fairchild Semiconductor Corporation 
        RoHS: Compliant
        24228
        • 3000:$0.1533
        • 24228:$0.1438
        FDN359BN
        DISTI # 2825184
        ON SemiconductorMOSFET, N-CH, 30V, 2.7A, SUPERSOT-3
        RoHS: Compliant
        13228
        • 5:$0.4520
        • 25:$0.3870
        • 100:$0.2640
        • 250:$0.2170
        • 500:$0.1780
        • 1000:$0.1640
        • 5000:$0.1550
        FDN359BN"F095
        DISTI # 2345399
        ON SemiconductorMOSFET, N CHANNEL, 30V, 0.026OHM, 2.7A,
        RoHS: Compliant
        0
        • 1:$0.9710
        • 10:$0.8090
        • 25:$0.4050
        • 100:$0.2940
        • 250:$0.2310
        • 500:$0.1870
        • 1000:$0.1740
        • 2500:$0.1620
        FDN359BN-F095
        DISTI # 2322594
        ON SemiconductorMOSFET, N CH, 30V, 2.7A, SUPERSOT-3
        RoHS: Compliant
        0
        • 1:$0.7050
        • 10:$0.5390
        • 100:$0.2780
        • 1000:$0.2040
        • 3000:$0.1700
        • 9000:$0.1560
        • 24000:$0.1480
        • 45000:$0.1410
        FDN359BN
        DISTI # 2825184
        ON SemiconductorMOSFET, N-CH, 30V, 2.7A, SUPERSOT-3
        RoHS: Compliant
        13623
        • 5:£0.3000
        • 25:£0.2870
        • 100:£0.1450
        • 250:£0.1440
        • 500:£0.1180
        Bild Teil # Beschreibung
        IS25LP128F-JKLE-TR

        Mfr.#: IS25LP128F-JKLE-TR

        OMO.#: OMO-IS25LP128F-JKLE-TR

        NOR Flash 128M 2.3-3.6V 166Mhz Serial NOR Flash
        MBT3904DW1T1G

        Mfr.#: MBT3904DW1T1G

        OMO.#: OMO-MBT3904DW1T1G

        Bipolar Transistors - BJT 200mA 60V Dual NPN
        SISS67DN-T1-GE3

        Mfr.#: SISS67DN-T1-GE3

        OMO.#: OMO-SISS67DN-T1-GE3

        MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
        ES2DA-13-F

        Mfr.#: ES2DA-13-F

        OMO.#: OMO-ES2DA-13-F

        Rectifiers RECTIFIER SUPER FAST "F" LEAD FREE
        MBRS2040LT3G

        Mfr.#: MBRS2040LT3G

        OMO.#: OMO-MBRS2040LT3G

        Schottky Diodes & Rectifiers 2A 40V Low Vf
        SM74611KTTR

        Mfr.#: SM74611KTTR

        OMO.#: OMO-SM74611KTTR

        Power Switch ICs - Power Distribution Smart Bypass Diode
        ERJ-3EKF1001V

        Mfr.#: ERJ-3EKF1001V

        OMO.#: OMO-ERJ-3EKF1001V

        Thick Film Resistors - SMD 0603 1Kohms 1% AEC-Q200
        SISS67DN-T1-GE3

        Mfr.#: SISS67DN-T1-GE3

        OMO.#: OMO-SISS67DN-T1-GE3-VISHAY

        MOSFET P-CHAN 30V POWERPAK 1212-
        ES2DA-13-F

        Mfr.#: ES2DA-13-F

        OMO.#: OMO-ES2DA-13-F-DIODES

        DIODE GEN PURP 200V 2A SMA
        SM74611KTTR

        Mfr.#: SM74611KTTR

        OMO.#: OMO-SM74611KTTR-TEXAS-INSTRUMENTS

        Gate Drivers Smart Bypass Diode
        Verfügbarkeit
        Aktie:
        27
        Auf Bestellung:
        2010
        Menge eingeben:
        Der aktuelle Preis von FDN359BN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,44 $
        0,44 $
        10
        0,34 $
        3,42 $
        100
        0,19 $
        18,60 $
        1000
        0,14 $
        139,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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