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SIHD9N60E-GE3

SIHD9N60E-GE3
Mfr. #:
SIHD9N60E-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CHANNEL 600V 9A DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHD9N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHD9N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 9A 3-Pin DPAK
***ment14 APAC
MOSFET, N-CH, 9A, 600V, TO-252
***ark
Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.32Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3-ND		Vishay SiliconixMOSFET N-CHANNEL 600V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2990In Stock
  • 6000:$0.8586
  • 3000:$0.8916
  • 500:$1.1558
  • 100:$1.4068
  • 25:$1.6512
  • 10:$1.7500
  • 1:$1.9500
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK - Tape and Reel (Alt: SIHD9N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.8059
  • 18000:$0.8279
  • 12000:$0.8519
  • 6000:$0.8879
  • 3000:$0.9149
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK (Alt: SIHD9N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8399
  • 500:€0.8629
  • 100:€0.8749
  • 50:€0.8889
  • 25:€1.0009
  • 10:€1.2139
  • 1:€1.7319
SIHD9N60E-GE3
DISTI # 78-SIHD9N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3021
  • 1:$1.9500
  • 10:$1.6200
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 3000:$0.8490
  • 6000:$0.8170
  • 9000:$0.7860
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-252
RoHS: Compliant		2913
  • 1000:$1.5400
  • 500:$1.8600
  • 100:$2.3900
  • 10:$2.9700
  • 1:$3.2800
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-2522927
  • 500:£0.8050
  • 250:£0.8590
  • 100:£0.9130
  • 10:£1.1800
  • 1:£1.4200
Bild Teil # Beschreibung
SIHD9N60E-GE3

Mfr.#: SIHD9N60E-GE3

OMO.#: OMO-SIHD9N60E-GE3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD9N60E-GE3

Mfr.#: SIHD9N60E-GE3

OMO.#: OMO-SIHD9N60E-GE3-VISHAY

 MOSFET N-CHANNEL 600V 9A DPAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von SIHD9N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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