SI2347DS-T1-GE3

SI2347DS-T1-GE3
Mfr. #:
SI2347DS-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET -30V .042Ohm@10V 5A P-Ch G-III
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2347DS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
SI2347DS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.050717 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-23-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
1.7 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
9 ns
Anstiegszeit
6 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
- 3.9 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 1 V to - 2.5 V
Rds-On-Drain-Source-Widerstand
68 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
19 ns
Typische-Einschaltverzögerungszeit
6 ns
Qg-Gate-Ladung
6.9 nC
Vorwärts-Transkonduktanz-Min
10 S
Tags
SI2347, SI234, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI2347DS-T1-GE3
DISTI # V72:2272_09216893
Vishay IntertechnologiesTrans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R
RoHS: Compliant
1598
  • 1000:$0.0938
  • 500:$0.1226
  • 250:$0.1411
  • 100:$0.1568
  • 25:$0.2662
  • 10:$0.2956
  • 1:$0.4598
SI2347DS-T1-GE3
DISTI # V36:1790_09216893
Vishay IntertechnologiesTrans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 1500000:$0.0682
  • 300000:$0.0717
  • 30000:$0.0783
  • 3000:$0.0794
SI2347DS-T1-GE3
DISTI # SI2347DS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 5A SOT-23
Min Qty: 1
Container: Cut Tape (CT)
24666In Stock
  • 1000:$0.1030
  • 500:$0.1339
  • 100:$0.1957
  • 10:$0.3140
  • 1:$0.4200
SI2347DS-T1-GE3
DISTI # SI2347DS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 5A SOT-23
Min Qty: 1
Container: Digi-Reel®
24666In Stock
  • 1000:$0.1030
  • 500:$0.1339
  • 100:$0.1957
  • 10:$0.3140
  • 1:$0.4200
SI2347DS-T1-GE3
DISTI # SI2347DS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 5A SOT-23
Min Qty: 3000
Container: Tape & Reel (TR)
24000In Stock
  • 150000:$0.0665
  • 75000:$0.0683
  • 30000:$0.0761
  • 15000:$0.0814
  • 6000:$0.0892
  • 3000:$0.0945
SI2347DS-T1-GE3
DISTI # 32705357
Vishay IntertechnologiesTrans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R
RoHS: Compliant
6000
  • 3000:$0.0805
SI2347DS-T1-GE3
DISTI # 32435739
Vishay IntertechnologiesTrans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R
RoHS: Compliant
2198
  • 1000:$0.0939
  • 500:$0.1227
  • 250:$0.1411
  • 101:$0.1568
SI2347DS-T1-GE3
DISTI # SI2347DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 3.8A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2347DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.0639
  • 18000:$0.0649
  • 12000:$0.0669
  • 6000:$0.0699
  • 3000:$0.0719
SI2347DS-T1-GE3
DISTI # SI2347DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 3.8A 3-Pin TO-236 T/R (Alt: SI2347DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.0689
  • 18000:€0.0739
  • 12000:€0.0799
  • 6000:€0.0929
  • 3000:€0.1369
SI2347DS-T1-GE3
DISTI # 99W9603
Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET
RoHS: Not Compliant
0
  • 50000:$0.0650
  • 30000:$0.0710
  • 20000:$0.0770
  • 10000:$0.0870
  • 5000:$0.0990
  • 1:$0.1050
SI2347DS-T1-GE3
DISTI # 70AC6496
Vishay IntertechnologiesMOSFET, P-CH, -30V, -5A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,MSL:- RoHS Compliant: Yes
RoHS: Compliant
4252
  • 1000:$0.1030
  • 500:$0.1340
  • 250:$0.1500
  • 100:$0.1650
  • 50:$0.2240
  • 25:$0.2830
  • 1:$0.4800
SI2347DS-T1-GE3
DISTI # 70459513
Vishay Siliconix-30V .042Ohm@10V 5A P-Ch G-III
RoHS: Not Compliant
0
  • 3000:$0.1650
  • 6000:$0.1540
  • 12000:$0.1100
  • 24000:$0.0990
SI2347DS-T1-GE3Vishay IntertechnologiesP-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3
RoHS: Compliant
Min Qty: 3000
3000Reel
  • 3000:$0.0610
SI2347DS-T1-GE3
DISTI # 78-SI2347DS-T1-GE3
Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SOT-23
RoHS: Compliant
71661
  • 1:$0.4800
  • 10:$0.2830
  • 100:$0.1650
  • 500:$0.1340
  • 1000:$0.1030
  • 3000:$0.0890
SI2347DS-T1-GE3
DISTI # 2679678
Vishay IntertechnologiesMOSFET, P-CH, -30V, -5A, SOT-23
RoHS: Compliant
0
  • 3000:$0.1200
SI2347DS-T1-GE3
DISTI # 2646368
Vishay IntertechnologiesMOSFET, P-CH, -30V, -5A, SOT-23
RoHS: Compliant
0
  • 1000:$0.1630
  • 500:$0.2120
  • 100:$0.3100
  • 10:$0.4970
  • 1:$0.6600
SI2347DS-T1-GE3
DISTI # 2646368
Vishay IntertechnologiesMOSFET, P-CH, -30V, -5A, SOT-23962
  • 1500:£0.0730
  • 500:£0.0800
  • 100:£0.1300
  • 50:£0.2260
  • 5:£0.2470
SI2347DS-T1-GE3VishayP-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3100
  • 1:¥4.2157
  • 10:¥2.9679
  • 100:¥1.9470
  • 500:¥1.1504
  • 1000:¥0.8849
SI2347DS-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SOT-23
RoHS: Compliant
Americas - 69000
  • 3000:$0.0720
  • 6000:$0.0680
  • 12000:$0.0660
  • 18000:$0.0640
Bild Teil # Beschreibung
SI2347DS-T1-GE3

Mfr.#: SI2347DS-T1-GE3

OMO.#: OMO-SI2347DS-T1-GE3

MOSFET -30V Vds 20V Vgs SOT-23
SI2347DS-T1-GE3

Mfr.#: SI2347DS-T1-GE3

OMO.#: OMO-SI2347DS-T1-GE3-VISHAY

IGBT Transistors MOSFET -30V .042Ohm@10V 5A P-Ch G-III
SI2347DS-T1-E3

Mfr.#: SI2347DS-T1-E3

OMO.#: OMO-SI2347DS-T1-E3-1190

Neu und Original
SI2347DS-T1-GE3-CUT TAPE

Mfr.#: SI2347DS-T1-GE3-CUT TAPE

OMO.#: OMO-SI2347DS-T1-GE3-CUT-TAPE-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von SI2347DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,10 $
0,10 $
10
0,09 $
0,91 $
100
0,09 $
8,63 $
500
0,08 $
40,75 $
1000
0,08 $
76,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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