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IRF9Z24NPBF

IRF9Z24NPBF
Mfr. #:
IRF9Z24NPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF9Z24NPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
175 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
12.7 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
45 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 P-Channel
Breite:
4.4 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
2.5 S
Abfallzeit:
37 ns
Produktart:
MOSFET
Anstiegszeit:
55 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
SP001555934
Gewichtseinheit:
0.211644 oz
Tags
IRF9Z24NPBF, IRF9Z24NP, IRF9Z24N, IRF9Z24, IRF9Z2, IRF9Z, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB Infineon IRF9Z24NPBF
***ied Electronics & Automation
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -12A;TO-220AB;PD 45W;VGS +/-20V
***ure Electronics
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 45 W
***p One Stop Global
Trans MOSFET P-CH Si 55V 12A 3-Pin(3+Tab) TO-220AB Tube
***akorn
Trans MOSFET P-CH 55V 12A 3-Pin(3+Tab) TO-220AB
***eco
Mosfet P-Channel -55Volt-12A 175 Mohm 12.7 Nc Qg To-2
*** Source Electronics
MOSFET P-CH 55V 12A TO-220AB
***ukat
P-Ch 55V 12A 45W 0,175R TO220AB
***ronik
MOSFET P-CHANNEL RoHSconf
***ark
Planar_Mosfets Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P, -55V, -12A, TO-220; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:12A; Resistance, Rds On:0.172ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:48A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:45W; Power, Pd:45W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:3.3°C/W; Transistors, No. of:1; Voltage, Vds:55V; Voltage, Vds Max:55V
***ment14 APAC
MOSFET, P, -55V, -12A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:55V; On Resistance Rds(on):172mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-12A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Teil # Mfg. Beschreibung Aktie Preis
IRF9Z24NPBF
DISTI # 30701265		Infineon Technologies AGTrans MOSFET P-CH Si 55V 12A 3-Pin(3+Tab) TO-220AB Tube5505
  • 1000:$0.5136
  • 500:$0.5232
  • 250:$0.5328
  • 100:$0.5472
  • 25:$0.6432
IRF9Z24NPBF
DISTI # IRF9Z24NPBF-ND		Infineon Technologies AGMOSFET P-CH 55V 12A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2913In Stock
  • 1000:$0.6663
  • 500:$0.8439
  • 100:$1.0882
  • 10:$1.3770
  • 1:$1.5500
IRF9Z24NPBF
DISTI # C1S327400158220		Infineon Technologies AGTrans MOSFET P-CH Si 55V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		669
  • 10:$0.5290
  • 1:$2.1500
IRF9Z24NPBF
DISTI # C1S322000488021		Infineon Technologies AGTrans MOSFET P-CH Si 55V 12A 3-Pin(3+Tab) TO-220AB Tube5505
  • 1000:$0.7200
  • 500:$0.7790
  • 100:$0.8680
  • 50:$1.0300
  • 25:$1.1500
  • 5:$1.5900
IRF9Z24NPBF
DISTI # IRF9Z24NPBF		Infineon Technologies AGTrans MOSFET P-CH 55V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF9Z24NPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 183
  • 1:$0.8229
  • 10:$0.7449
  • 25:$0.7429
  • 50:$0.7409
  • 100:$0.6469
  • 500:$0.5969
  • 1000:$0.5119
IRF9Z24NPBF
DISTI # IRF9Z24NPBF		Infineon Technologies AGTrans MOSFET P-CH 55V 12A 3-Pin(3+Tab) TO-220AB (Alt: IRF9Z24NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 5000
  • 1000:$0.5020
  • 2000:$0.4814
  • 3000:$0.4749
  • 5000:$0.4564
  • 10000:$0.4505
  • 25000:$0.4393
  • 50000:$0.4285
IRF9Z24NPBF
DISTI # SP001555934		Infineon Technologies AGTrans MOSFET P-CH 55V 12A 3-Pin(3+Tab) TO-220AB (Alt: SP001555934)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.8299
  • 10:€0.7439
  • 25:€0.7429
  • 50:€0.7409
  • 100:€0.6449
  • 500:€0.6019
  • 1000:€0.5159
IRF9Z24NPBF
DISTI # 63J7422		Infineon Technologies AGP CHANNEL MOSFET, -55V, 12A, TO-220AB,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.175ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,MSL:- RoHS Compliant: Yes138
  • 1:$1.3300
  • 10:$1.1400
  • 100:$0.8690
  • 500:$0.7680
  • 1000:$0.6060
  • 2500:$0.5380
  • 10000:$0.5170
IRF9Z24NPBF.
DISTI # 27AC6914		Infineon Technologies AGPLANAR_MOSFETS ROHS COMPLIANT: YES0
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8860
  • 500:$0.7680
  • 1000:$0.6060
  • 2500:$0.5380
  • 10000:$0.5170
IRF9Z24NPBF
DISTI # 70017017		Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -55V,RDS(ON) 0.175Ohm,ID -12A,TO-220AB,PD 45W,VGS +/-20V
RoHS: Compliant		0
  • 1:$0.9410
  • 10:$0.8250
  • 100:$0.7230
  • 500:$0.6270
  • 1000:$0.5500
IRF9Z24NPBF
DISTI # 942-IRF9Z24NPBF		Infineon Technologies AGMOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC
RoHS: Compliant		3173
  • 1:$1.3300
  • 10:$1.1400
  • 100:$0.8690
  • 500:$0.7680
  • 1000:$0.6060
  • 2000:$0.5380
  • 10000:$0.5170
IRF9Z24NPBFInternational Rectifier 
RoHS: Not Compliant		1479
  • 1000:$0.5300
  • 500:$0.5500
  • 100:$0.5800
  • 25:$0.6000
  • 1:$0.6500
IRF9Z24NPBFInternational Rectifier 88
    IRF9Z24NPBF
    DISTI # 5410799    		Infineon Technologies AGMOSFET P-CHANNEL 55V 12A TO220AB, EA2288
    • 1:£2.0000
    • 10:£0.6700
    • 25:£0.6100
    IRF9Z24NPBF
    DISTI # IRF9Z24NPBF    		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-55V,-12A,45W,TO220AB618
    • 1:$1.0639
    • 3:$0.8752
    • 10:$0.7025
    • 100:$0.6104
    IRF9Z24NPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 2100
      IRF9Z24NPBF
      DISTI # IRF9Z24NPBF      		Infineon Technologies AGP-Ch 55V 12A 45W 0,175R TO220AB
      RoHS: Compliant      		2630
      • 10:€0.7545
      • 50:€0.5145
      • 200:€0.4545
      • 500:€0.4375
      IRF9Z24NPBF
      DISTI # 8648670      		Infineon Technologies AGMOSFET, P, -55V, -12A, TO-220
      RoHS: Compliant      		3681
      • 1:$2.1000
      • 10:$1.8100
      • 100:$1.3800
      • 500:$1.2200
      • 1000:$0.9590
      • 2000:$0.8520
      • 10000:$0.8440
      IRF9Z24NPBF
      DISTI # 8648670      		Infineon Technologies AGMOSFET, P, -55V, -12A, TO-220
      RoHS: Compliant      		2069
      • 5:£0.6830
      • 25:£0.6220
      • 100:£0.6120
      • 250:£0.6030
      • 500:£0.5930
      IRF9Z24NPBF
      DISTI # XSLY00000000895      		INFINEON/IRTO-220AB
      RoHS: Compliant      		5400
      • 2950:$0.2400
      • 5400:$0.2200
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1988
      Menge eingeben:
      Der aktuelle Preis von IRF9Z24NPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,82 $
      0,82 $
      10
      0,70 $
      6,99 $
      100
      0,54 $
      53,70 $
      500
      0,48 $
      237,50 $
      1000
      0,37 $
      374,00 $
      2000
      0,36 $
      716,00 $
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