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| PartNumber | IRF9Z24NPBF | IRF9Z24NPBF C | IRF9Z24NPBF , 2SK1060-Z- |
| Description | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 175 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 45 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 2.5 S | - | - |
| Fall Time | 37 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Part # Aliases | SP001555934 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF9Z24NPBF | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | |
| IRF9Z24NPBF C | Neu und Original | ||
| IRF9Z24NPBF , 2SK1060-Z- | Neu und Original | ||
| IRF9Z24NPBF,F9Z24N,IRF9Z | Neu und Original | ||
| IRF9Z24NPBF,IRF9Z24N | Neu und Original | ||
| IRF9Z24NPBF-CN | Neu und Original | ||
| IRF9Z24NPBF-MEX | Neu und Original | ||
| IRF9Z24NPBF. | PLANAR_MOSFETS ROHS COMPLIANT: YES | ||
Infineon Technologies |
IRF9Z24NPBF | MOSFET P-CH 55V 12A TO-220AB |