We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUZ31S | HARTING Technology Group | RoHS: Not Compliant | Europe - 491 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUZ31 OMO.#: OMO-BUZ31 |
MOSFET N-Ch 200V 14.5A TO220-3 |
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Mfr.#: BUZ312 OMO.#: OMO-BUZ312-1190 |
Neu und Original |
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Mfr.#: BUZ314 OMO.#: OMO-BUZ314-1190 |
Neu und Original |
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Mfr.#: BUZ31LH OMO.#: OMO-BUZ31LH-1190 |
Neu und Original |
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Mfr.#: BUZ328 OMO.#: OMO-BUZ328-1190 |
Neu und Original |
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Mfr.#: BUZ32L3045A OMO.#: OMO-BUZ32L3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BUZ33 OMO.#: OMO-BUZ33-1190 |
Neu und Original |
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Mfr.#: BUZ330 OMO.#: OMO-BUZ330-1190 |
Neu und Original |
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Mfr.#: BUZ338 OMO.#: OMO-BUZ338-1190 |
Neu und Original |
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Mfr.#: BUZ36 OMO.#: OMO-BUZ36-1190 |
Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE |