PartNumber | BUZ30A H | BUZ30A | BUZ30A E3045A |
Description | MOSFET N-Ch 200V 21A TO220FP-3 | MOSFET N-Ch 200V 21A TO220-3 | MOSFET N-CH 200V 21A TO-263 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | GaN | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 21 A | 21 A | - |
Rds On Drain Source Resistance | 100 mOhms | 130 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | - | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 125 W | 125 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | SIPMOS | - | - |
Packaging | Tube | Tube | - |
Height | 15.65 mm | 15.65 mm | - |
Length | 10 mm | 10 mm | - |
Series | BUZ30 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.4 mm | 4.4 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 6 S | - | - |
Fall Time | 90 ns | 90 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 70 ns | 70 ns | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 250 ns | 250 ns | - |
Typical Turn On Delay Time | 30 ns | 30 ns | - |
Part # Aliases | BUZ30AHXKSA1 BUZ3AHXK SP000682990 | BUZ30AXK | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Infineon Technologies |
BUZ30A H | MOSFET N-Ch 200V 21A TO220FP-3 | |
BUZ30AH3045AATMA1 | MOSFET N-Ch 200V 21A D2PAK-2 | ||
BUZ30AHXKSA1 | MOSFET N-Ch 200V 21A TO220FP-3 | ||
BUZ30A | MOSFET N-CH 200V 21A TO-220AB | ||
BUZ30A E3045A | MOSFET N-CH 200V 21A TO-263 | ||
BUZ30AH3045AATMA1 | MOSFET N-CH 200V 21A TO-263 | ||
BUZ30AHXKSA1 | MOSFET N-CH 200V 21A TO220-3 | ||
BUZ31 | MOSFET N-CH 200V 14.5A TO220AB | ||
BUZ31 E3045A | MOSFET N-CH 200V 14.5A TO263 | ||
BUZ31 E3046 | MOSFET N-CH 200V 14.5A TO262-3 | ||
BUZ31H3046XKSA1 | MOSFET N-CH 200V 14.5A TO262-3 | ||
BUZ31HXKSA1 | MOSFET N-CH 200V 14.5A TO220-3 | ||
BUZ31 H3045A | IGBT Transistors MOSFET N-Ch 200V 14.5A D2PAK-2 | ||
Infineon Technologies |
BUZ31 | MOSFET N-Ch 200V 14.5A TO220-3 | |
BUZ31 E3046 | MOSFET N-Ch 200V 14.5A I2PAK-3 | ||
BUZ31H3046XKSA1 | MOSFET N-Ch 200V 14.5A I2PAK-3 | ||
BUZ30A | MOSFET N-Ch 200V 21A TO220-3 | ||
BUZ30 | Neu und Original | ||
BUZ304 | Neu und Original | ||
BUZ305 | Neu und Original | ||
BUZ305+ | Neu und Original | ||
BUZ307 | 3 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | ||
BUZ307 , MMBZ27VC | Neu und Original | ||
BUZ308 | Neu und Original | ||
BUZ30A , MMBD4148T | Neu und Original | ||
BUZ30A H SMD | Neu und Original | ||
BUZ30A H3045A | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: BUZ30AH3045AATMA1) | ||
BUZ30A SMD | Neu und Original | ||
BUZ30A-E3045A | Neu und Original | ||
BUZ30A. | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB | ||
BUZ30AE3045A | Neu und Original | ||
BUZ31 , MAX6482BL33BD3 | Neu und Original | ||
BUZ31 H | MOSFET N-Ch 200V 14.5A TO220FP-3 | ||
BUZ31 L3045A | Neu und Original | ||
BUZ31 SMD | Neu und Original | ||
BUZ31-E3045A | Neu und Original | ||
BUZ310 | Neu und Original | ||
BUZ311 | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | ||
BUZ312 | Neu und Original | ||
BUZ312LH | Neu und Original | ||
BUZ314 | Neu und Original | ||
BUZ31A | Neu und Original | ||
BUZ31H | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
BUZ31H3045A | Neu und Original | ||
BUZ31H3045AATMA1 | Neu und Original | ||
BUZ31H3046 | Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) | ||
BUZ30AH | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB | ||
BUZ30AH3045A | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
BUZ30A H | Darlington Transistors MOSFET N-Ch 200V 21A TO220FP-3 | ||
BUZ30A L3045A | IGBT Transistors MOSFET N-Ch 200V 21A D2PAK-2 |