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BUZ30AH3045AATMA1

BUZ30AH3045AATMA1
Mfr. #:
BUZ30AH3045AATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 200V 21A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BUZ30AH3045AATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
-
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SIPMOS
Verpackung:
Spule
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
6 S
Abfallzeit:
90 ns
Produktart:
MOSFET
Anstiegszeit:
70 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
250 ns
Typische Einschaltverzögerungszeit:
30 ns
Teil # Aliase:
BUZ30A BUZ3AH345AXT H3045A SP000736082
Gewichtseinheit:
0.139332 oz
Tags
BUZ30AH3, BUZ30AH, BUZ30A, BUZ30, BUZ3, BUZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
***i-Key
BUZ30 - SIPMOS POWER TRANSISTOR
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
Teil # Mfg. Beschreibung Aktie Preis
BUZ30AH3045AATMA1
DISTI # V72:2272_06391703		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 500:$1.1631
  • 250:$1.3452
  • 100:$1.3591
  • 25:$1.7089
  • 10:$1.7261
  • 1:$2.2497
BUZ30AH3045AATMA1
DISTI # BUZ30AH3045AATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 21A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 1000:$1.0758
BUZ30AH3045AATMA1
DISTI # BUZ30AH3045AATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 21A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    BUZ30AH3045AATMA1
    DISTI # BUZ30AH3045AATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 200V 21A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      BUZ30AH3045AATMA1
      DISTI # 32333774      		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		2000
      • 1000:$0.7114
      BUZ30AH3045AATMA1
      DISTI # 26195987      		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		800
      • 9:$2.2497
      BUZ30AH3045AATMA1
      DISTI # SP000736082      		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin TO-263 T/R (Alt: SP000736082)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Europe - 1000
      • 10000:€0.6759
      • 6000:€0.7279
      • 4000:€0.7889
      • 2000:€0.8609
      • 1000:€1.0519
      BUZ30A H3045A
      DISTI # BUZ30AH3045AATMA1      		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: BUZ30AH3045AATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 10000:$0.7659
      • 6000:$0.7799
      • 4000:$0.8079
      • 2000:$0.8379
      • 1000:$0.8689
      BUZ30AH3045AATMA1
      DISTI # 726-BUZ30AH3045AATMA      		Infineon Technologies AGMOSFET N-Ch 200V 21A D2PAK-2
      RoHS: Compliant      		980
      • 1:$2.0700
      • 10:$1.7600
      • 100:$1.4100
      • 500:$1.2300
      • 1000:$1.0200
      • 2000:$0.9540
      • 5000:$0.9190
      BUZ30A H3045A
      DISTI # 726-BUZ30AH3045A      		Infineon Technologies AGMOSFET N-Ch 200V 21A D2PAK-2
      RoHS: Compliant      		988
      • 1:$2.0700
      • 10:$1.7600
      • 100:$1.4100
      • 500:$1.2300
      • 1000:$1.0200
      • 2000:$0.9540
      • 5000:$0.9190
      BUZ30AH3045AATMA1
      DISTI # BUZ30AH3045AATMA1      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,21A,125W,PG-TO263-3925
      • 100:$0.9000
      • 10:$1.0400
      • 3:$1.1700
      • 1:$1.3100
      Bild Teil # Beschreibung
      BUZ30AH3045AATMA1

      Mfr.#: BUZ30AH3045AATMA1

      OMO.#: OMO-BUZ30AH3045AATMA1

      		 MOSFET N-Ch 200V 21A D2PAK-2
      BUZ30AH3045AATMA1

      Mfr.#: BUZ30AH3045AATMA1

      OMO.#: OMO-BUZ30AH3045AATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 200V 21A TO-263
      BUZ30AH3045A

      Mfr.#: BUZ30AH3045A

      OMO.#: OMO-BUZ30AH3045A-1190

      		 Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      Verfügbarkeit
      Aktie:
      980
      Auf Bestellung:
      2963
      Menge eingeben:
      Der aktuelle Preis von BUZ30AH3045AATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,07 $
      2,07 $
      10
      1,76 $
      17,60 $
      100
      1,41 $
      141,00 $
      500
      1,23 $
      615,00 $
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