SIA533EDJ-T1-GE3

Name: Vishay - SIA533EDJ-T1-GE3
Brand: Vishay
SKU: OMO-3518577
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA533EDJ-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N/P-CH 12V 4.5A SC70-6
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIA533EDJ-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIA533EDJ-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Arrays

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SIA533EDJ-GE3

Gewichtseinheit: 0.000988 oz

Montageart: SMD/SMT

Paket-Koffer: PowerPAKR SC-70-6 Dual

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: PowerPAKR SC-70-6 Dual

Aufbau: Single

FET-Typ: N- und P-Kanal

Leistung max: 7.8W

Transistor-Typ: 1 N-Channel 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 12V

Eingangskapazität-Ciss-Vds: 420pF @ 6V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 4.5A

Rds-On-Max-Id-Vgs: 34 mOhm @ 4.6A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 15nC @ 10V

Pd-Verlustleistung: 7.8 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

ID-Dauer-Drain-Strom: 4.5 A - 3.7 A

Vds-Drain-Source-Breakdown-Voltage: 12 V

Rds-On-Drain-Source-Widerstand: 28 mOhms 48 mOhms

Transistor-Polarität: N-Kanal P-Kanal

Qg-Gate-Ladung: 10 nC 13 nC

Vorwärts-Transkonduktanz-Min: 11 S 21 S

Tags: SIA53, SIA5, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA533EDJ-T1-GE3 Beschreibung

***ied Electronics & Automation: SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.5 A; 12 V; 6-Pin SC-70

***ure Electronics: SiA533EDJ Series Dual N & P Channel 12 V 34 mOhm 7.8 W Mosfet - PowerPAK SC-70-6

***et Europe: Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R

***C: Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70

***Components: Trans MOSFET N/P-CH 12V 4.5A

***i-Key: MOSFET N/P-CH 12V 4.5A SC70-6

***: N- AND P-CHANNEL 12-V (D-S)

***ark: Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.028Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:7.8W Rohs Compliant: No

SIA533EDJ-T1-GE3 Mehr Informationen

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIA533EDJ-T1-GE3 DISTI # V72:2272_09216848	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R	2640	1000:$0.2126 500:$0.2515 250:$0.3041 100:$0.3051 25:$0.3797 10:$0.3814 1:$0.4597
SIA533EDJ-T1-GE3 DISTI # SIA533EDJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	91879In Stock	1000:$0.2600 500:$0.3365 100:$0.4589 10:$0.6120 1:$0.7300
SIA533EDJ-T1-GE3 DISTI # SIA533EDJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	91879In Stock	1000:$0.2600 500:$0.3365 100:$0.4589 10:$0.6120 1:$0.7300
SIA533EDJ-T1-GE3 DISTI # SIA533EDJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	90000In Stock	3000:$0.2302
SIA533EDJ-T1-GE3 DISTI # 30208455	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R	2640	1000:$0.2126 500:$0.2515 250:$0.3041 100:$0.3051 34:$0.3797
SIA533EDJ-T1-GE3 DISTI # SIA533EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4679 6000:€0.3189 12000:€0.2749 18000:€0.2539 30000:€0.2359
SIA533EDJ-T1-GE3 DISTI # SIA533EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA533EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1959 6000:$0.1899 12000:$0.1819 18000:$0.1769 30000:$0.1729
SIA533EDJ-T1-GE3 DISTI # SIA533EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIA533EDJ-T1-GE3 DISTI # 04X9740	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.7600 10:$0.6400 25:$0.5860 50:$0.5330 100:$0.4790 500:$0.3510 1000:$0.2710
SIA533EDJ-T1-GE3 DISTI # 86R3786	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes	0	1:$0.2300 3000:$0.2300
SIA533EDJ-T1-GE3. DISTI # 15AC4247	Vishay Intertechnologies	Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:7.8W , RoHS Compliant: No	0	1:$0.2300 3000:$0.2300
SIA533EDJ-T1-GE3 DISTI # 70616551	Vishay Siliconix	SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor,4.5 A,12 V,6-Pin SC-70 RoHS: Compliant	0	300:$0.4300 600:$0.3800 1500:$0.3400 3000:$0.3000
SIA533EDJ-T1-GE3 DISTI # 781-SIA533EDJ-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	9531	1:$0.6400 10:$0.4880 100:$0.3620 500:$0.2980 1000:$0.2300 3000:$0.2100 6000:$0.1960 9000:$0.1830
SIA533EDJ-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - 3000
SIA533EDJ-T1-GE3 DISTI # C1S803601730507	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2640	250:$0.3042 100:$0.3051 25:$0.3797 10:$0.3814

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: SIA533EDJ-T1-GE3

OMO.#: OMO-SIA533EDJ-T1-GE3

MOSFET -12V Vds 8V Vgs PowerPAK SC-70

Mfr.#: SIA533EDJ-T1-GE3-CUT TAPE

OMO.#: OMO-SIA533EDJ-T1-GE3-CUT-TAPE-1190

Neu und Original

Mfr.#: SIA533EDJ-T1-GE3

OMO.#: OMO-SIA533EDJ-T1-GE3-VISHAY

MOSFET N/P-CH 12V 4.5A SC70-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von SIA533EDJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,26 $~~; ~~0,26 $~~

10: ~~0,25 $~~; ~~2,45 $~~

100: ~~0,23 $~~; ~~23,22 $~~

500: ~~0,22 $~~; ~~109,65 $~~

1000: ~~0,21 $~~; ~~206,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIA53 4
SIA5 20
SIA 347

SIA533EDJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes