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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPA057N08N3GXKSA1 DISTI # IPA057N08N3GXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 80V 60A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube | 976In Stock |
|
| IPA057N08N3 G DISTI # IPA057N08N3 G | Infineon Technologies AG | Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP (Alt: IPA057N08N3 G) RoHS: Compliant Min Qty: 500 | Asia - 1000 |
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| IPA057N08N3GXK DISTI # IPA057N08N3GXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
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| IPA057N08N3GXKSA1 DISTI # 34AC1645 | Infineon Technologies AG | MOSFET, N-CH, 80V, 60A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes | 1360 |
|
| IPA057N08N3 G DISTI # 726-IPA057N08N3G | Infineon Technologies AG | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 RoHS: Compliant | 428 |
|
| IPA057N08N3G | Infineon Technologies AG | Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 437 |
|
| IPA057N08N3GXKSA1 DISTI # 8922107P | Infineon Technologies AG | MOSFET N-CHANNEL 80V 60A TO220-3 FP, TU | 315 |
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| IPA057N08N3G | Infineon Technologies AG | 118 | ||
| IPA057N08N3GXKSA1 DISTI # 2781062 | Infineon Technologies AG | MOSFET, N-CH, 80V, 60A, TO-220FP RoHS: Compliant | 1360 |
|
| IPA057N08N3GXKSA1 DISTI # 2781062 | Infineon Technologies AG | MOSFET, N-CH, 80V, 60A, TO-220FP RoHS: Compliant | 1375 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: IPA057N06N3GXKSA1 |
MOSFET N-CH 60V 60A TO220-3-31 |
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Mfr.#: IPA057N08N3GXKSA1 |
MOSFET N-CH 80V 60A TO220-3 |
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Mfr.#: IPA057N06N OMO.#: OMO-IPA057N06N-1190 |
Neu und Original |
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Mfr.#: IPA057N06N3G OMO.#: OMO-IPA057N06N3G-1190 |
Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IPA057N08N OMO.#: OMO-IPA057N08N-1190 |
Neu und Original |
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Mfr.#: IPA057N08N3 OMO.#: OMO-IPA057N08N3-1190 |
Neu und Original |
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Mfr.#: IPA057N08N3G OMO.#: OMO-IPA057N08N3G-1190 |
Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IPA057N08N3G,057N08N |
Neu und Original |
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Mfr.#: IPA057N08N3GXKSA1 , 2SD1 |
Neu und Original |
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Mfr.#: IPA057N08N3 G OMO.#: OMO-IPA057N08N3-G-124 |
Darlington Transistors MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 |