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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPA057N06N3GXKSA1 DISTI # V99:2348_06383876 | Infineon Technologies AG | Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant | 440 |
|
| IPA057N06N3GXKSA1 DISTI # IPA057N06N3GXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 60V 60A TO220-3-31 RoHS: Compliant Min Qty: 1 Container: Tube | 321In Stock |
|
| IPA057N06N3GXKSA1 DISTI # 26197707 | Infineon Technologies AG | Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant | 440 |
|
| IPA057N06N3GXKSA1 DISTI # IPA057N06N3GXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA057N06N3GXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPA057N06N3GXKSA1 DISTI # 34AC1644 | Infineon Technologies AG | MOSFET, N-CH, 60V, 60A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes | 242 |
|
| IPA057N06N3G | Infineon Technologies AG | Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 31105 |
|
| IPA057N06N3GXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 6814 |
|
| IPA057N06N3 G DISTI # 726-IPA057N06N3G | Infineon Technologies AG | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 RoHS: Compliant | 500 |
|
| IPA057N06N3GXKSA1 DISTI # 726-IPA057N06N3GXKSA | Infineon Technologies AG | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 RoHS: Compliant | 494 |
|
| IPA057N06N3GXKSA1 DISTI # 8922220P | Infineon Technologies AG | MOSFET N-CHANNEL 60V 60A OPTIMOS TO220, TU | 310 |
|
| IPA057N06N3GXKSA1 DISTI # C1S322000562147 | Infineon Technologies AG | Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant | 440 |
|
| IPA057N06N3GXKSA1 DISTI # 2781061 | Infineon Technologies AG | MOSFET, N-CH, 60V, 60A, TO-220 RoHS: Compliant | 242 |
|
| IPA057N06N3GXKSA1 DISTI # 2781061 | Infineon Technologies AG | MOSFET, N-CH, 60V, 60A, TO-220 RoHS: Compliant | 267 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPA057N08N3 G OMO.#: OMO-IPA057N08N3-G |
MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 |
|
Mfr.#: IPA052N08NM5SXKSA1 OMO.#: OMO-IPA052N08NM5SXKSA1 |
MOSFET |
|
|
Mfr.#: IPA050N10NM5SXKSA1 OMO.#: OMO-IPA050N10NM5SXKSA1 |
MOSFET |
|
Mfr.#: IPA057N06N3GXKSA1 |
MOSFET N-CH 60V 60A TO220-3-31 |
|
Mfr.#: IPA057N08N3GXKSA1 |
MOSFET N-CH 80V 60A TO220-3 |
|
Mfr.#: IPA057N08N3GXK OMO.#: OMO-IPA057N08N3GXK-1190 |
Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) |
|
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Mfr.#: IPA057N06N3-G OMO.#: OMO-IPA057N06N3-G-1190 |
Neu und Original |
|
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Mfr.#: IPA057N08N OMO.#: OMO-IPA057N08N-1190 |
Neu und Original |
|
|
Mfr.#: IPA057N08N3 OMO.#: OMO-IPA057N08N3-1190 |
Neu und Original |
|
|
Mfr.#: IPA057N08N3G OMO.#: OMO-IPA057N08N3G-1190 |
Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |