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SIHP17N80E-GE3

SIHP17N80E-GE3
Mfr. #:
SIHP17N80E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 800V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP17N80E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP17N80E-GE3 DatasheetSIHP17N80E-GE3 Datasheet (P4-P6)SIHP17N80E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHP17N80E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
15 A
Rds On - Drain-Source-Widerstand:
250 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
122 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Abfallzeit:
26 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
71 ns
Typische Einschaltverzögerungszeit:
22 ns
Gewichtseinheit:
0.063493 oz
Tags
SIHP17, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***enic
800V 15A 290m´Î@10V8.5A 208W 4V@250Ã×A N Channel TO-220AB MOSFETs ROHS
***ure Electronics
N-Channel 800V 15A (Tc) 208W (Tc) Through Hole TO-220AB MOSEFT
***nell
MOSFET, N-CH, 800V, 15A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 208W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP17N80E-GE3
DISTI # SIHP17N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 15A TO220AB
RoHS: Not compliant
Min Qty: 1
Container: Tube		On Order
  • 3000:$2.4374
  • 1000:$2.5593
  • 100:$3.5647
  • 25:$4.1132
  • 10:$4.3510
  • 1:$4.8400
SIHP17N80E-GE3
DISTI # 59AC7410		Vishay IntertechnologiesN-CHANNEL 800V0
  • 2500:$2.2200
  • 1000:$2.3900
  • 500:$2.6900
  • 100:$2.9600
  • 50:$3.3500
  • 25:$3.6300
  • 10:$3.9200
  • 1:$4.4300
SIHP17N80E-GE3
DISTI # 78-SIHP17N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220AB
RoHS: Compliant		1447
  • 1:$4.8700
  • 10:$4.0300
  • 100:$3.3200
  • 250:$3.2200
  • 500:$2.8900
  • 1000:$2.4300
  • 2500:$2.3100
SIHP17N80E-GE3
DISTI # 2772347		Vishay IntertechnologiesMOSFET, N-CH, 800V, 15A, TO-220AB0
  • 500:£2.2300
  • 250:£2.4900
  • 100:£2.5700
  • 10:£3.1100
  • 1:£4.1900
SIHP17N80E-GE3
DISTI # 2772347		Vishay IntertechnologiesMOSFET, N-CH, 800V, 15A, TO-220AB
RoHS: Compliant		0
  • 2500:$3.9000
  • 1000:$4.1100
  • 500:$4.8600
  • 100:$6.0000
  • 10:$7.3200
  • 1:$8.1900
Bild Teil # Beschreibung
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CRS1206AFX-1R00ELF

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 Modular Connectors / Ethernet Connectors CONN MOD PLUG 6P6C SHIELDED
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Mfr.#: IXFP20N85X

OMO.#: OMO-IXFP20N85X-IXYS-CORPORATION

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C0805C105K4RAC7210

Mfr.#: C0805C105K4RAC7210

OMO.#: OMO-C0805C105K4RAC7210-1190

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BC817-40WT1G

Mfr.#: BC817-40WT1G

OMO.#: OMO-BC817-40WT1G-ON-SEMICONDUCTOR

 TRANS NPN 45V 0.5A SC70
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von SIHP17N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,87 $
4,87 $
10
4,03 $
40,30 $
100
3,32 $
332,00 $
250
3,22 $
805,00 $
500
2,89 $
1 445,00 $
1000
2,43 $
2 430,00 $
2500
2,31 $
5 775,00 $
5000
2,22 $
11 100,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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