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BSC252N10NSFGATMA1

BSC252N10NSFGATMA1
Mfr. #:
BSC252N10NSFGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC252N10NSFGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
19.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
17 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 2
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
18 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
21 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
BSC252N10NSF BSC252N1NSFGXT G SP000379608
Gewichtseinheit:
0.005609 oz
Tags
BSC252N10NSFG, BSC252N10NSF, BSC252, BSC25, BSC2, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 2.25 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 40A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:78W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Teil # Mfg. Beschreibung Aktie Preis
BSC252N10NSFGATMA1
DISTI # BSC252N10NSFGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4818
BSC252N10NSFGATMA1
DISTI # BSC252N10NSFGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC252N10NSFGATMA1
DISTI # BSC252N10NSFGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC252N10NSFGATMA1
DISTI # 28994648		Infineon Technologies AGTrans MOSFET N-CH 100V 7.2A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		255
  • 250:$0.5300
  • 100:$0.5989
  • 25:$0.7381
  • 18:$0.7467
BSC252N10NSFGATMA1
DISTI # BSC252N10NSFGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC252N10NSFGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.4289
  • 10000:$0.4279
  • 20000:$0.4259
  • 30000:$0.4249
  • 50000:$0.4239
BSC252N10NSFGATMA1
DISTI # 60R2521		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 40A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0195ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.5200
  • 2500:$0.4910
  • 10000:$0.4820
BSC252N10NSF G
DISTI # 726-BSC252N10NSFG		Infineon Technologies AGMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
RoHS: Compliant		107
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC252N10NSFGATMA1
DISTI # 726-BSC252N10NSFGATM		Infineon Technologies AGMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
RoHS: Compliant		0
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
  • 5000:$0.4380
BSC252N10NSFGXT
DISTI # 726-BSC252N10NSFGXT		Infineon Technologies AGMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
RoHS: Compliant		0
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
  • 5000:$0.4380
BSC252N10NSFGATMA1
DISTI # 1775477		Infineon Technologies AGMOSFET, N CH, 40A, 100V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.7300
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9910
  • 1000:$0.8880
BSC252N10NSFGATMA1
DISTI # 1775477		Infineon Technologies AGMOSFET, N CH, 40A, 100V, PG-TDSON-8
RoHS: Compliant		0
  • 5:£0.6050
  • 25:£0.5740
  • 100:£0.5420
  • 250:£0.5100
  • 500:£0.4780
BSC252N10NSFGATMA1
DISTI # C1S322000522884		Infineon Technologies AGMOSFETs
RoHS: Compliant		255
  • 250:$0.5300
  • 100:$0.5989
  • 25:$0.7381
  • 10:$0.7467
Bild Teil # Beschreibung
BSC252N10NSFGXT

Mfr.#: BSC252N10NSFGXT

OMO.#: OMO-BSC252N10NSFGXT

 MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC252N10NSFGATMA1

Mfr.#: BSC252N10NSFGATMA1

OMO.#: OMO-BSC252N10NSFGATMA1

 MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC252N10NSF G

Mfr.#: BSC252N10NSF G

OMO.#: OMO-BSC252N10NSF-G

 MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC252N10NS

Mfr.#: BSC252N10NS

OMO.#: OMO-BSC252N10NS-1190

 Neu und Original
BSC252N10NSF

Mfr.#: BSC252N10NSF

OMO.#: OMO-BSC252N10NSF-1190

 Neu und Original
BSC252N10NSFG

Mfr.#: BSC252N10NSFG

OMO.#: OMO-BSC252N10NSFG-1190

 Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R (Alt: BSC252N10NSF G)
BSC252N10NSFGATMA1

Mfr.#: BSC252N10NSFGATMA1

OMO.#: OMO-BSC252N10NSFGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 40A TDSON-8
BSC252N10NSFGATMA1 , TDZ

Mfr.#: BSC252N10NSFGATMA1 , TDZ

OMO.#: OMO-BSC252N10NSFGATMA1-TDZ-1190

 Neu und Original
BSC252N10NSFGXT

Mfr.#: BSC252N10NSFGXT

OMO.#: OMO-BSC252N10NSFGXT-1190

 MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC252N10NSF G

Mfr.#: BSC252N10NSF G

OMO.#: OMO-BSC252N10NSF-G-126

 IGBT Transistors MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von BSC252N10NSFGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,08 $
1,08 $
10
0,92 $
9,22 $
100
0,71 $
70,90 $
500
0,63 $
313,00 $
1000
0,49 $
494,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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