BSC252N10NSFG

BSC252N10NSFGATMA1 vs BSC252N10NSFG vs BSC252N10NSFGATMA1 , TDZ

 
PartNumberBSC252N10NSFGATMA1BSC252N10NSFGBSC252N10NSFGATMA1 , TDZ
DescriptionMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R (Alt: BSC252N10NSF G)
ManufacturerInfineon-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance19.5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation78 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min18 S--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesBSC252N10NSF BSC252N1NSFGXT G SP000379608--
Unit Weight0.005609 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC252N10NSFGXT MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC252N10NSFGATMA1 MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC252N10NSFGATMA1 MOSFET N-CH 100V 40A TDSON-8
BSC252N10NSFG Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R (Alt: BSC252N10NSF G)
BSC252N10NSFGATMA1 , TDZ Neu und Original
BSC252N10NSFGXT MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
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