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BSC196N10NSGATMA1

BSC196N10NSGATMA1
Mfr. #:
BSC196N10NSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC196N10NSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Breite:
5.15 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
BSC196N10NS BSC196N1NSGXT G SP000379604
Tags
BSC196N10NSG, BSC196, BSC19, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ureElectronics
NChannel100V196mOhmOptiMOS2PowerTransistorPGTDSON8
***ineonSCT
Infineons100VOptiMOSpowerMOSFETsoffersuperiorsolutionsforhighefficiencyhighpowerdensitySMPSPGTDSON8RoHS
***ment14APAC
MOSFETNCH100V45APGTDSON8;TransistorPolarityNChannel;ContinuousDrainCurrentId45A;DrainSourceVoltageVds100V;OnResistanceRdson167mohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd78W;OperatingTemperatureRange55Cto150C;TransistorCaseStylePGTSDSON;NoofPins8;SVHCNoSVHC20Jun2011;CurrentIdMax45A;PowerDissipationPd78W;TransistorTypePowerMOSFET;VoltageVgsMax20V
***ineon
The100VOptiMOSfamilyofferssuperiorsolutionsforhighefficiencyhighpowerdensitySMPSComparedtothenextbesttechnologythisfamilyachievesareductionof30inbothRDSonandFOMfigureofmeritSummaryofFeaturesExcellentswitchingperformance;WorldslowestRDSon;VerylowQgandQgd;ExcellentgatechargexRDSonproductFOM;RoHScomplianthalogenfree;MSL1rated2BenefitsEnvironmentallyfriendly;Increasedefficiency;Highestpowerdensity;Lessparallelingrequired;Smallestboardspaceconsumption;EasytodesignproductsTargetApplicationsSynchronousrectificationforACDCSMPS;Motorcontrolfor48V80Vsystemsiedomesticvehiclespowertoolstrucks;IsolatedDCDCconverterstelecomanddatacomsystems;Oringswitchesandcircuitbreakersin48Vsystems;ClassDaudioamplifiers;UninterruptablepowersuppliesUPS
Teil # Mfg. Beschreibung Aktie Preis
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4818
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3789
  • 10000:$0.3649
  • 20000:$0.3519
  • 30000:$0.3399
  • 50000:$0.3339
BSC196N10NSGATMA1
DISTI # 60R2519		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 45A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:45A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0167ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes5000
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NS G
DISTI # 726-BSC196N10NSG		Infineon Technologies AGMOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
RoHS: Compliant		168
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 1:$1.7300
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9910
  • 1000:$0.7820
  • 5000:$0.7730
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 5:£0.9010
  • 25:£0.7450
  • 100:£0.6780
Bild Teil # Beschreibung
BSC196N10NS G

Mfr.#: BSC196N10NS G

OMO.#: OMO-BSC196N10NS-G

 MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
BSC196N10NSGATMA1

Mfr.#: BSC196N10NSGATMA1

OMO.#: OMO-BSC196N10NSGATMA1

 MOSFET MV POWER MOS
BSC196N10NS

Mfr.#: BSC196N10NS

OMO.#: OMO-BSC196N10NS-1190

 Neu und Original
BSC196N10NS G

Mfr.#: BSC196N10NS G

OMO.#: OMO-BSC196N10NS-G-1190

 MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
BSC196N10NSG

Mfr.#: BSC196N10NSG

OMO.#: OMO-BSC196N10NSG-1190

 Neu und Original
BSC196N10NSGATMA1

Mfr.#: BSC196N10NSGATMA1

OMO.#: OMO-BSC196N10NSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 45A TDSON-8
BSC196N10NSGATMA1 , TDZF

Mfr.#: BSC196N10NSGATMA1 , TDZF

OMO.#: OMO-BSC196N10NSGATMA1-TDZF-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von BSC196N10NSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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