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CSD17302Q5A

CSD17302Q5A
Mfr. #:
CSD17302Q5A
Beschreibung:
RF Bipolar Transistors MOSFET 30V N Channel NexFET Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD17302Q5A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
CSD17302Q5A Mehr Informationen CSD17302Q5A Product Details
Produkteigenschaft
Attributwert
Hersteller
TI
Produktkategorie
FETs - Einzeln
Serie
CSD17302Q5A
Verpackung
Spule
Montageart
SMD/SMT
Handelsname
NexFET
Paket-Koffer
VSON-FET-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
10 V
ID-Dauer-Drain-Strom
16 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.2 V
Rds-On-Drain-Source-Widerstand
9 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
10.6 ns
Typische-Einschaltverzögerungszeit
5.2 ns
Qg-Gate-Ladung
5.4 nC
Vorwärts-Transkonduktanz-Min
68 S
Tags
CSD17302, CSD1730, CSD173, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 87 A, 30 V, 6.4 Mohm, 8 V, 1.2 V Rohs Compliant: Yes
***as Instruments
30V, N ch NexFET MOSFET™, single SON5x6, 9mOhm 8-VSONP -55 to 150
***p One Stop Global
Trans MOSFET N-CH 30V 16A 8-Pin VSONP EP T/R
***p One Stop Japan
Trans MOSFET N-CH 30V 16A 8-Pin SON EP T/R
***i-Key
MOSFET N-CH 30V 87A 8SON
***th Star Micro
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 30V, 87A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:3W; Transistor Case Style:SON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:87A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:10V
***nell
MOSFET, CANALE N, 30V, 87A, 8SON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:87A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0064ohm; Tensione Vgs di Misura Rds(on):8V; Tensione di Soglia Vgs:1.2V; Dissipazione di Potenza Pd:3W; Modello Case Transistor:SON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:87A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:10V
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD17302Q5A
DISTI # V72:2272_07248755		Trans MOSFET N-CH 30V 16A 8-Pin VSONP EP T/R
RoHS: Compliant		1812
  • 1000:$0.4147
  • 500:$0.4964
  • 250:$0.5168
  • 100:$0.5742
  • 25:$0.6380
  • 10:$0.7797
  • 1:$0.8795
CSD17302Q5A
DISTI # V39:1801_07248755		Trans MOSFET N-CH 30V 16A 8-Pin VSONP EP T/R
RoHS: Compliant		0
    CSD17302Q5A
    DISTI # 296-25854-1-ND    		MOSFET N-CH 30V 87A 8SON
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1684In Stock
    • 1000:$0.4527
    • 500:$0.5734
    • 100:$0.7394
    • 10:$0.9360
    • 1:$1.0600
    CSD17302Q5A
    DISTI # 296-25854-6-ND    		MOSFET N-CH 30V 87A 8SON
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1684In Stock
    • 1000:$0.4527
    • 500:$0.5734
    • 100:$0.7394
    • 10:$0.9360
    • 1:$1.0600
    CSD17302Q5A
    DISTI # 296-25854-2-ND    		MOSFET N-CH 30V 87A 8SON
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2500:$0.4102
    CSD17302Q5A
    DISTI # 26599949    		Trans MOSFET N-CH 30V 16A 8-Pin VSONP EP T/R
    RoHS: Compliant    		1812
    • 18:$0.4375
    CSD17302Q5A
    DISTI # CSD17302Q5A    		Trans MOSFET N-CH 30V 16A 8-Pin SON EP T/R (Alt: CSD17302Q5A)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 250:€0.5842
    • 100:€0.6635
    • 25:€0.8176
    • 1:€0.9718
    CSD17302Q5A
    DISTI # CSD17302Q5A    		Trans MOSFET N-CH 30V 16A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17302Q5A)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.3669
    • 15000:$0.3779
    • 10000:$0.3909
    • 5000:$0.4039
    • 2500:$0.4249
    CSD17302Q5A
    DISTI # 04X3038    		MOSFET Transistor, N Channel, 87 A, 30 V, 6.4 mohm, 8 V, 1.2 V RoHS Compliant: Yes4671
    • 1:$0.3530
    • 10:$0.3530
    • 25:$0.3530
    • 50:$0.3530
    • 100:$0.3530
    • 250:$0.3530
    • 500:$0.3530
    • 1000:$0.3530
    CSD17302Q5A30V, N ch NexFET MOSFET™, single SON5x6, 9mOhm7330
    • 1000:$0.3300
    • 750:$0.3700
    • 500:$0.4700
    • 250:$0.5700
    • 100:$0.6200
    • 25:$0.7200
    • 10:$0.7800
    • 1:$0.8800
    CSD17302Q5A
    DISTI # 595-CSD17302Q5A    		MOSFET 30V N Channel NexFET Power MOSFET
    RoHS: Compliant    		2819
    • 1:$0.9600
    • 10:$0.8200
    • 100:$0.6300
    • 500:$0.5570
    • 1000:$0.4400
    • 2500:$0.3900
    • 10000:$0.3760
    CSD17302Q5APower Field-Effect Transistor, 87A I(D), 30V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3881
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    CSD17302Q5A .
    DISTI # 1823844    		MOSFET, N CH, 30V, 87A, 8SON
    RoHS: Compliant    		4
    • 22500:$0.5600
    • 10000:$0.5790
    • 2500:$0.6000
    • 1000:$0.6770
    • 500:$0.8560
    • 100:$0.9680
    • 10:$1.2700
    • 1:$1.4800
    CSD17302Q5A .
    DISTI # 1823844    		MOSFET, N CH, 30V, 87A, 8SON
    RoHS: Compliant    		14
    • 500:£0.4250
    • 250:£0.4530
    • 100:£0.4810
    • 25:£0.6260
    • 5:£0.7000
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von CSD17302Q5A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,50 $
    0,50 $
    10
    0,47 $
    4,70 $
    100
    0,45 $
    44,55 $
    500
    0,42 $
    210,40 $
    1000
    0,40 $
    396,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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