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SPB20N60S5

SPB20N60S5
Mfr. #:
SPB20N60S5
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 600V 20A D2PAK-2 CoolMOS S5
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPB20N60S5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
CoolMOS S5
Verpackung
Spule
Teil-Aliasnamen
SP000012112 SPB20N60S5ATMA1 SPB20N60S5XT
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
208 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
30 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
20 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
190 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
140 ns
Typische-Einschaltverzögerungszeit
120 ns
Kanal-Modus
Erweiterung
Tags
SPB20N60S5, SPB20N60S, SPB20N60, SPB20N6, SPB20N, SPB20, SPB2, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 600V 20A TO-263
***ronik
N-CH 600V 20A 190mOhm TO263-3
***ark
Mosfet, N Channel, 600V, 20A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: Yes
***ineon
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance
***ment14 APAC
Prices include import duty and tax. MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:208W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:190mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:208W; Pulse Current Idm:40A; SMD Marking:20N60S5; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
***nell
MOSFET, N, D2-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:20A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.16ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:208W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:20A; Corrente di Impulso Idm:40A; Dissipazione di Potenza Ptot Max:208W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Marcatura SMD:20N60S5; No. di Transistor:1; Resistenza Stato On Max:190mohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:600V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tensione Vgs th Max:5.5V
Teil # Mfg. Beschreibung Aktie Preis
SPB20N60S5ATMA1
DISTI # V72:2272_06377347		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		946
  • 500:$3.9510
  • 250:$4.2200
  • 100:$4.4320
  • 25:$4.9670
  • 10:$5.2970
  • 1:$6.3305
SPB20N60S5ATMA1
DISTI # V36:1790_06377347		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    SPB20N60S5ATMA1
    DISTI # SPB20N60S5ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 600V 20A TO-263
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      SPB20N60S5ATMA1
      DISTI # SPB20N60S5ATMA1CT-ND      		Infineon Technologies AGMOSFET N-CH 600V 20A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        SPB20N60S5ATMA1
        DISTI # SPB20N60S5ATMA1DKR-ND        		Infineon Technologies AGMOSFET N-CH 600V 20A TO-263
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          SPB20N60S5ATMA1
          DISTI # 31339560          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
          RoHS: Compliant          		946
          • 500:$3.9490
          • 250:$4.2160
          • 100:$4.4300
          • 25:$4.9680
          • 10:$5.2990
          • 3:$5.7650
          SPB20N60S5
          DISTI # SPB20N60S5          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 (Alt: SPB20N60S5)
          RoHS: Compliant
          Min Qty: 1000          		Asia - 0
          • 50000:$2.4233
          • 25000:$2.4544
          • 10000:$2.4862
          • 5000:$2.5189
          • 3000:$2.5870
          • 2000:$2.6589
          • 1000:$2.7349
          SPB20N60S5XT
          DISTI # SPB20N60S5ATMA1          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB20N60S5ATMA1)
          RoHS: Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
          • 6000:$2.3900
          • 10000:$2.3900
          • 4000:$2.4900
          • 2000:$2.5900
          • 1000:$2.6900
          SPB20N60S5E3045
          DISTI # SP000012112          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 T/R (Alt: SP000012112)
          RoHS: Compliant
          Min Qty: 1000
          Container: Tape and Reel          		Europe - 0
          • 10000:€2.1900
          • 6000:€2.2900
          • 2000:€2.3900
          • 4000:€2.3900
          • 1000:€2.4900
          SPB20N60S5
          DISTI # 21M8755          		Infineon Technologies AGMOSFET, N CHANNEL, 600V, 20A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V RoHS Compliant: Yes0
            SPB20N60S5
            DISTI # 726-SPB20N60S5            		Infineon Technologies AGMOSFET N-Ch 600V 20A D2PAK-2 CoolMOS S5
            RoHS: Compliant            		820
            • 1:$5.0700
            • 10:$4.3100
            • 100:$3.7400
            • 250:$3.5500
            • 500:$3.1800
            • 1000:$2.6900
            • 2000:$2.5500
            SPB20N60S5Infineon Technologies AG*** FREE SHIPPING ORDERS OVER $100 *** 20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB651
            • 329:$2.7225
            • 77:$3.0525
            • 1:$4.9500
            SPB20N60S5Infineon Technologies AG 814
              SPB20N60S5Infineon Technologies AG 460
                SPB20N60S5
                DISTI # 1214264                		Infineon Technologies AGMOSFET, N, D2-PAK
                RoHS: Compliant                		0
                • 500:$4.8900
                • 250:$5.4600
                • 100:$5.7600
                • 10:$6.6300
                • 1:$7.8000
                SPB20N60S5ATMA1
                DISTI # XSKDRABV0049933                		Infineon Technologies AG 
                RoHS: Compliant                		2000 in Stock0 on Order
                • 2000:$4.0440
                • 1000:$4.3320
                SPB20N60S5
                DISTI # TMOSP7892                		Infineon Technologies AGN-CH 600V20A190mOhm TO263-3
                RoHS: Compliant                		Stock DE - 0Stock HK - 0Stock US - 0
                • 1000:$3.9600
                Bild Teil # Beschreibung
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                OMO.#: OMO-SPB20N60C3E3045-1190

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                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                2000
                Menge eingeben:
                Der aktuelle Preis von SPB20N60S5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
                Menge
                Stückpreis
                ext. Preis
                1
                3,63 $
                3,63 $
                10
                3,45 $
                34,53 $
                100
                3,27 $
                327,14 $
                500
                3,09 $
                1 544,85 $
                1000
                2,91 $
                2 907,90 $
                Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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