 |  | | |
| PartNumber | SPB20N60S5 | SPB20N60S2 | SPB20N60S5,20N60S5 |
| Description | MOSFET N-Ch 600V 20A D2PAK-2 CoolMOS S5 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 208 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS S5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 140 ns | - | - |
| Typical Turn On Delay Time | 120 ns | - | - |
| Part # Aliases | SP000012112 SPB20N60S5ATMA1 SPB2N6S5XT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPB20N60S5 | MOSFET N-Ch 600V 20A D2PAK-2 CoolMOS S5 | |
| SPB20N60S5ATMA1 | MOSFET N-CH 600V 20A TO-263 | ||
Infineon Technologies |
SPB20N60S5ATMA1 | MOSFET HIGH POWER_LEGACY | |
| SPB20N60S5 | MOSFET N-Ch 600V 20A D2PAK-2 CoolMOS S5 | ||
| SPB20N60S2 | Neu und Original | ||
| SPB20N60S5,20N60S5 | Neu und Original |