SIHH11N60EF-T1-GE3

SIHH11N60EF-T1-GE3
Mfr. #:
SIHH11N60EF-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHH11N60EF-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHH11N60EF-T1-GE3 DatasheetSIHH11N60EF-T1-GE3 Datasheet (P4-P6)SIHH11N60EF-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHH11N60EF-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-8x8-4
Verpackung:
Spule
Höhe:
1 mm
Länge:
8 mm
Serie:
EF
Breite:
8 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.001764 oz
Tags
SIHH11N, SIHH11, SIHH1, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 11A 4-Pin PowerPAK EP T/R
***et
Trans MOSFET N-CH 600V 11A 5-Pin PowerPAK T/R
***i-Key
MOSFET N-CH 600V 11A POWERPAK8X8
***ark
Mosfet, N-Ch, 600V, 11A, Powerpak-5; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 11A, POWERPAK-5; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:114W; Transistor Case Style:PowerPAK; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:EF-Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited
***nell
MOSFET, CA-N, 600V, 11A, POWERPAK-5; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.31ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:114W; Modello Case Transistor:PowerPAK; No. di Pin:5Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EF-Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Teil # Mfg. Beschreibung Aktie Preis
SIHH11N60EF-T1-GE3
DISTI # V72:2272_14664700
Vishay IntertechnologiesTrans MOSFET N-CH 600V 11A 4-Pin PowerPAK EP T/R3000
  • 75000:$1.8990
  • 30000:$1.9060
  • 15000:$1.9140
  • 6000:$1.9210
  • 3000:$1.9290
  • 1000:$1.9360
  • 500:$1.9440
  • 250:$2.1600
  • 100:$2.3990
  • 50:$2.6660
  • 25:$2.9619
  • 10:$3.2910
  • 1:$4.3549
SIHH11N60EF-T1-GE3
DISTI # SIHH11N60EF-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 600V 11A POWERPAK8X8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3015In Stock
  • 1000:$2.1621
  • 500:$2.5637
  • 100:$3.0115
  • 10:$3.6760
  • 1:$4.0900
SIHH11N60EF-T1-GE3
DISTI # SIHH11N60EF-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 600V 11A POWERPAK8X8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3015In Stock
  • 1000:$2.1621
  • 500:$2.5637
  • 100:$3.0115
  • 10:$3.6760
  • 1:$4.0900
SIHH11N60EF-T1-GE3
DISTI # SIHH11N60EF-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 600V 11A POWERPAK8X8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 3000:$1.9942
SIHH11N60EF-T1-GE3
DISTI # 31610784
Vishay IntertechnologiesTrans MOSFET N-CH 600V 11A 4-Pin PowerPAK EP T/R3000
  • 4:$4.3549
SIHH11N60EF-T1-GE3
DISTI # SIHH11N60EF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 11A 5-Pin PowerPAK T/R (Alt: SIHH11N60EF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€1.6900
  • 18000:€1.7900
  • 12000:€2.0900
  • 6000:€2.4900
  • 3000:€3.1900
SIHH11N60EF-T1-GE3
DISTI # SIHH11N60EF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 11A 5-Pin PowerPAK T/R - Tape and Reel (Alt: SIHH11N60EF-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    SIHH11N60EF-T1-GE3
    DISTI # 20AC3824
    Vishay IntertechnologiesN-CHANNEL 600V0
    • 20000:$1.7600
    • 12000:$1.7900
    • 8000:$1.8600
    • 4000:$2.0000
    • 2000:$2.1500
    • 1:$2.2500
    SIHH11N60EF-T1-GE3
    DISTI # 78-SIHH11N60EF-T1GE3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
    RoHS: Compliant
    3035
    • 1:$3.9900
    • 10:$3.3100
    • 100:$2.7200
    • 250:$2.6400
    • 500:$2.3700
    • 1000:$2.0000
    • 3000:$1.9000
    SIHH11N60EF-T1-GE3
    DISTI # 2576520
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 11A, POWERPAK-50
    • 500:£1.8300
    • 250:£2.0400
    • 100:£2.1000
    • 10:£2.5500
    • 1:£3.4300
    SIHH11N60EF-T1-GE3
    DISTI # 2576520
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 11A, POWERPAK-5
    RoHS: Compliant
    0
    • 3000:$2.8600
    • 1000:$3.0100
    • 500:$3.5700
    • 250:$3.9800
    • 100:$4.1000
    • 10:$4.9900
    • 1:$6.0100
    Bild Teil # Beschreibung
    LM2904ATH-13

    Mfr.#: LM2904ATH-13

    OMO.#: OMO-LM2904ATH-13

    Operational Amplifiers - Op Amps OpAmp General Purpose
    BAV99LT1G

    Mfr.#: BAV99LT1G

    OMO.#: OMO-BAV99LT1G

    Diodes - General Purpose, Power, Switching 70V 215mA Dual
    FES6J

    Mfr.#: FES6J

    OMO.#: OMO-FES6J

    Rectifiers 6A 600V Ultra Fast
    US2JDFQ-13

    Mfr.#: US2JDFQ-13

    OMO.#: OMO-US2JDFQ-13

    Rectifiers Standard Recovery Rectifier
    IPL60R365P7AUMA1

    Mfr.#: IPL60R365P7AUMA1

    OMO.#: OMO-IPL60R365P7AUMA1

    MOSFET
    SIHJ10N60E-T1-GE3

    Mfr.#: SIHJ10N60E-T1-GE3

    OMO.#: OMO-SIHJ10N60E-T1-GE3

    MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
    TPS709B50DBVR

    Mfr.#: TPS709B50DBVR

    OMO.#: OMO-TPS709B50DBVR

    LDO Voltage Regulators TPS709 die in TLV704 pinout
    RC0402FR-0710KL

    Mfr.#: RC0402FR-0710KL

    OMO.#: OMO-RC0402FR-0710KL

    Thick Film Resistors - SMD 10K OHM 1%
    SIHJ10N60E-T1-GE3

    Mfr.#: SIHJ10N60E-T1-GE3

    OMO.#: OMO-SIHJ10N60E-T1-GE3-VISHAY

    MOSFET N-CH 600V 10A POWERPAKSO
    TPS709B50DBVR

    Mfr.#: TPS709B50DBVR

    OMO.#: OMO-TPS709B50DBVR-TEXAS-INSTRUMENTS

    IC REG LINEAR 5V 150MA SOT23-5
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von SIHH11N60EF-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,99 $
    3,99 $
    10
    3,31 $
    33,10 $
    100
    2,72 $
    272,00 $
    250
    2,64 $
    660,00 $
    500
    2,37 $
    1 185,00 $
    1000
    2,00 $
    2 000,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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