FDU6676AS

Mfr. #:: FDU6676AS
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 30V 90A IPAK
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDU6676AS Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: FDU6676, FDU667, FDU66, FDU6, FDU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDU6676AS Beschreibung

***i-Key: MOSFET N-CH 30V 90A IPAK

***ser: MOSFETs 30V N-Channel PowerTrench SyncFET

***el Nordic: Contact for details

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ment14 APAC: MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

***ser: MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes

***nell: MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V

***emi: Power MOSFET 24V 80A 5.8 Single N-Channel DPAK

***ser: MOSFETs- Power and Small Signal 24V 80A N-Channel

***r Electronics: Power Field-Effect Transistor, 80A I(D), 24V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***Yang: NFET DPAK 30A 25V 0.006R - Rail/Tube

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:80A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.8mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:75W ;RoHS Compliant: Yes

***emi: Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK

***ponent Stockers USA: 14 A 25 V 0.006 ohm N-CHANNEL Si POWER MOSFET

***th Star Micro: Power MOSFET 25V 97A Single N-Channel

***r Electronics: Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:17.7A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):4.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDU6676AS DISTI # FDU6676AS-ND	ON Semiconductor	MOSFET N-CH 30V 90A IPAK RoHS: Compliant Min Qty: 1800 Container: Tube	Limited Supply - Call
FDU6676AS DISTI # 512-FDU6676AS	ON Semiconductor	MOSFET 30V N-Channel PowerTrench SyncFET RoHS: Compliant	0
FDU6676AS	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 90A I(D), 30V, 5.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	1708	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDU6296 OMO.#: OMO-FDU6296	MOSFET 30V N-Ch PowerTrench Fast Switching
	Mfr.#: FDU6680 OMO.#: OMO-FDU6680	MOSFET 30V N-Channel PowerTrench
	Mfr.#: FDU6612A OMO.#: OMO-FDU6612A-ON-SEMICONDUCTOR	MOSFET N-CH 30V 9.5A I-PAK
	Mfr.#: FDU6644 OMO.#: OMO-FDU6644-1190	Power Field-Effect Transistor, 67A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
	Mfr.#: FDU6676AS OMO.#: OMO-FDU6676AS-ON-SEMICONDUCTOR	MOSFET N-CH 30V 90A IPAK
	Mfr.#: FDU6676ASNL OMO.#: OMO-FDU6676ASNL-1190	Neu und Original
	Mfr.#: FDU6680A(Q) OMO.#: OMO-FDU6680A-Q--1190	Neu und Original
	Mfr.#: FDU6680FSC OMO.#: OMO-FDU6680FSC-1190	Neu und Original
	Mfr.#: FDU6688-Q OMO.#: OMO-FDU6688-Q-1190	Neu und Original
	Mfr.#: FDU6N50FTU OMO.#: OMO-FDU6N50FTU-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von FDU6676AS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,39 $~~; ~~0,39 $~~

10: ~~0,37 $~~; ~~3,70 $~~

100: ~~0,35 $~~; ~~35,10 $~~

500: ~~0,33 $~~; ~~165,75 $~~

1000: ~~0,31 $~~; ~~312,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDU6676 3
FDU667 5
FDU66 23
FDU6 39
FDU 164

FDU6676AS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes