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SIS413DN-T1-GE3

SIS413DN-T1-GE3
Mfr. #:
SIS413DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS413DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS413DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
9.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
73 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SIS
Transistortyp:
1 P-Channel
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
50 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns, 82 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns, 45 ns
Typische Einschaltverzögerungszeit:
11 ns, 55 ns
Tags
SIS41, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
Transistor MOSFET P-CH 30V 18A 8-Pin PowerPAK 1212
***ure Electronics
Single P-Channel -30 V 52 W 110 nC TrenchMOS Surface Mount Mosfet
***enic
30V 18A 52W 9.4m´Î@10V15A 2.5V@250Ã×A P Channel PowerPAK 1212-8 MOSFETs ROHS
***roFlash
Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ied Electronics & Automation
-30V 9.4mOhm@10V -18A P-Ch G-III
*** Source Electronics
MOSFET P-CH 30V 18A PPAK 1212-8
***nell
MOSFET, P-CH, -30V, -18A, POWERPAK 1212; Transistor Polarity: P Channel; Continuous Drain Current Id: -18A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 52W; Transistor Case Style: PowerPAK 1212; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SIS413DN-T1-GE3
DISTI # V72:2272_07431901		Vishay IntertechnologiesTrans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		22
  • 10:$0.4255
  • 1:$0.4623
SIS413DN-T1-GE3
DISTI # V36:1790_07431901		Vishay IntertechnologiesTrans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000000:$0.2045
  • 1500000:$0.2046
  • 300000:$0.2096
  • 30000:$0.2164
  • 3000:$0.2175
SIS413DN-T1-GE3
DISTI # SIS413DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 18A PPAK 1212-8
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.1995
  • 6000:$0.2025
  • 3000:$0.2175
SIS413DN-T1-GE3
DISTI # SIS413DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 18A PPAK 1212-8
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2472
  • 500:$0.3090
  • 100:$0.3909
  • 10:$0.5100
  • 1:$0.5800
SIS413DN-T1-GE3
DISTI # SIS413DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 18A PPAK 1212-8
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2472
  • 500:$0.3090
  • 100:$0.3909
  • 10:$0.5100
  • 1:$0.5800
SIS413DN-T1-GE3
DISTI # 34538557		Vishay IntertechnologiesTrans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		3000
  • 6000:$0.1849
  • 3000:$0.1898
SIS413DN-T1-GE3
DISTI # SIS413DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS413DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIS413DN-T1-GE3
    DISTI # SIS413DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS413DN-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.2352
    • 18000:$0.2414
    • 12000:$0.2480
    • 6000:$0.2549
    • 3000:$0.2621
    SIS413DN-T1-GE3
    DISTI # 99W9577    		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET
    RoHS: Not Compliant    		0
    • 50000:$0.1940
    • 30000:$0.2030
    • 20000:$0.2180
    • 10000:$0.2330
    • 5000:$0.2520
    • 1:$0.2580
    SIS413DN-T1-GE3
    DISTI # 70AC6482    		Vishay IntertechnologiesMOSFET, P-CH, -30V, -18A, POWERPAK 1212,Transistor Polarity:P Channel,Continuous Drain Current Id:-18A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0076ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V RoHS Compliant: Yes
    RoHS: Compliant    		9
    • 500:$0.2310
    • 1000:$0.2310
    • 100:$0.2500
    • 250:$0.2500
    • 1:$0.2730
    • 25:$0.2730
    • 50:$0.2730
    SIS413DN-T1-GE3
    DISTI # 70459589    		Vishay Siliconix-30V 9.4mOhm@10V -18A P-Ch G-III
    RoHS: Not Compliant    		0
    • 3000:$0.7420
    SIS413DN-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		Americas -
      SIS413DN-T1-GE3
      DISTI # 2646403      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -18A, POWERPAK 1212
      RoHS: Compliant      		0
      • 3000:$0.3270
      • 1000:$0.3620
      • 500:$0.4520
      • 100:$0.5470
      • 10:$0.7200
      • 1:$0.8890
      SIS413DN-T1-GE3
      DISTI # 2679713      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -18A, POWERPAK 1212
      RoHS: Compliant      		0
      • 6000:$0.3090
      • 3000:$0.3270
      SIS413DN-T1-GE3
      DISTI # 2679713      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -18A, POWERPAK 1212
      RoHS: Compliant      		0
      • 9000:£0.1620
      • 3000:£0.1650
      SIS413DN-T1-GE3
      DISTI # 2646403RL      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -18A, POWERPAK 1212
      RoHS: Compliant      		0
      • 1500:£0.1810
      • 500:£0.1960
      • 100:£0.2960
      • 50:£0.3890
      • 5:£0.4410
      SIS413DN-T1-GE3
      DISTI # 2646403      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -18A, POWERPAK 1212
      RoHS: Compliant      		0
      • 1500:£0.1810
      • 500:£0.1960
      • 100:£0.2960
      • 50:£0.3890
      • 5:£0.4410
      SIS413DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		Europe - 3000
        Bild Teil # Beschreibung
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        RC0402FR-07100RL

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        OMO.#: OMO-RC0402FR-07100RL

        		 Thick Film Resistors - SMD 100 OHM 1%
        RC0402FR-0710KL

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        OMO.#: OMO-RC0402FR-0710KL

        		 Thick Film Resistors - SMD 10K OHM 1%
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        		 Ferrite Beads 0603 120 OHM
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        Mfr.#: BLM18PG121SN1D

        OMO.#: OMO-BLM18PG121SN1D-MURATA-ELECTRONICS

        		 EMI Filter Beads, Chips & Arrays 0603 120 OHM
        BQ25703ARSNT

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        OMO.#: OMO-BQ25703ARSNT-TEXAS-INSTRUMENTS

        		 IC BATT MON MULTI-CHEM 32WQFN
        RC0402FR-0740K2L

        Mfr.#: RC0402FR-0740K2L

        OMO.#: OMO-RC0402FR-0740K2L-YAGEO

        		 Thick Film Resistors - SMD 40.2K OHM 1%
        RC0402FR-07200KL

        Mfr.#: RC0402FR-07200KL

        OMO.#: OMO-RC0402FR-07200KL-YAGEO

        		 Thick Film Resistors - SMD 200K OHM 1%
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1984
        Menge eingeben:
        Der aktuelle Preis von SIS413DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,59 $
        0,59 $
        10
        0,48 $
        4,78 $
        100
        0,36 $
        36,30 $
        500
        0,30 $
        150,00 $
        1000
        0,24 $
        240,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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