PartNumber | SIS412DN-T1-GE3 | SIS410DN-T1-GE3 | SIS413DN-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 20V Vds 20V Vgs PowerPAK 1212-8 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | 30 V |
Id Continuous Drain Current | 12 A | - | 18 A |
Rds On Drain Source Resistance | 24 mOhms | - | 9.4 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | - | 1 V |
Vgs Gate Source Voltage | 10 V | - | 10 V |
Qg Gate Charge | 8 nC | - | 73 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 10 W | - | 52 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIS | SIS | SIS |
Transistor Type | 1 N-Channel | - | 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 17 S | - | 50 S |
Fall Time | 10 ns | - | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns, 12 ns | - | 11 ns, 82 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns, 15 ns | - | 40 ns, 45 ns |
Typical Turn On Delay Time | 5 ns, 15 ns | - | 11 ns, 55 ns |
Part # Aliases | SIS412DN-GE3 | SIS410DN-GE3 | - |
Height | - | 1.04 mm | 1.04 mm |
Length | - | 3.3 mm | 3.3 mm |
Width | - | 3.3 mm | 3.3 mm |