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SIS410DN-T1-GE3

SIS410DN-T1-GE3
Mfr. #:
SIS410DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS410DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS410DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SIS
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIS410DN-GE3
Tags
SIS410D, SIS410, SIS41, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    P***o
    P***o
    UA

    Posilka went to the ukrainian mayzha city. not provirovyav. sverletsky by sending shvidko! i recommend!

    2019-03-20
    S***n
    S***n
    RU

    It was desirable to pack! But it's okay!

    2019-04-12
    A***V
    A***V
    RU

    The product corresponds to the description. Delivery 2 months. thank you.

    2019-01-20
***ure Electronics
Single N-Channel 20 V 0.0048 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
***enic
20V 35A 4.8m´Î@10V20A 3.8W 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 20V, 35A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Teil # Mfg. Beschreibung Aktie Preis
SIS410DN-T1-GE3
DISTI # V36:1790_09216084		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000000:$0.4227
  • 1500000:$0.4229
  • 300000:$0.4329
  • 30000:$0.4484
  • 3000:$0.4509
SIS410DN-T1-GE3
DISTI # V72:2272_09216084		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		161825In Stock
    • 1000:$0.4975
    • 500:$0.6302
    • 100:$0.7629
    • 10:$0.9790
    • 1:$1.0900
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		161825In Stock
    • 1000:$0.4975
    • 500:$0.6302
    • 100:$0.7629
    • 10:$0.9790
    • 1:$1.0900
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		159000In Stock
    • 15000:$0.4122
    • 6000:$0.4283
    • 3000:$0.4508
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R (Alt: SIS410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4459
    • 18000:€0.4659
    • 12000:€0.5269
    • 6000:€0.6499
    • 3000:€0.9059
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.3759
    • 18000:$0.3859
    • 12000:$0.3969
    • 6000:$0.4139
    • 3000:$0.4259
    SIS410DN-T1-GE3
    DISTI # 08R0706    		Vishay IntertechnologiesMOSFET, N CH, 20V, 35A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52W RoHS Compliant: Yes0
    • 12000:$0.3850
    • 6000:$0.4340
    • 3000:$0.4560
    • 1:$0.4590
    SIS410DN-T1-GE3
    DISTI # 05W6932    		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
    • 1000:$0.4870
    • 500:$0.6080
    • 250:$0.6510
    • 100:$0.6860
    • 10:$0.8680
    • 1:$0.8960
    SIS410DN-T1-GE3
    DISTI # 55R1905    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):4mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:5.2W,Operating RoHS Compliant: Yes1220
    • 1000:$0.5640
    • 500:$0.5960
    • 100:$0.6930
    • 50:$0.7630
    • 25:$0.8320
    • 10:$0.9020
    • 1:$1.1000
    SIS410DN-T1-GE3
    DISTI # 781-SIS410DN-T1-GE3    		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		7753
    • 1:$1.0800
    • 10:$0.8920
    • 100:$0.6850
    • 500:$0.5890
    • 1000:$0.4640
    • 3000:$0.4330
    • 6000:$0.4120
    • 9000:$0.3960
    SIS410DN-T1-GE3
    DISTI # 1779235    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK8
    RoHS: Compliant    		1221
    • 1000:$0.7500
    • 500:$0.9500
    • 100:$1.1500
    • 10:$1.4800
    • 1:$1.6400
    SIS410DN-T1-GE3
    DISTI # 1779235    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK81426
    • 500:£0.4280
    • 250:£0.4630
    • 100:£0.4970
    • 25:£0.6470
    • 5:£0.7600
    SIS410DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      SIS410DN-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8Americas - 6000
      • 3000:$0.4250
      • 6000:$0.4040
      • 12000:$0.3910
      • 18000:$0.3800
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      854S01AKILF

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      LP2985AIM5-3.1/NOPB

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      OMO.#: OMO-LP2985AIM5-3-1-NOPB-TEXAS-INSTRUMENTS

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      Verfügbarkeit
      Aktie:
      13
      Auf Bestellung:
      1996
      Menge eingeben:
      Der aktuelle Preis von SIS410DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,08 $
      1,08 $
      10
      0,89 $
      8,92 $
      100
      0,68 $
      68,50 $
      500
      0,59 $
      294,50 $
      1000
      0,46 $
      464,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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