SIS412DN

Mfr. #:: SIS412DN
Hersteller:: Vishay Intertechnologies
Beschreibung:
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIS412DN Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: SIS412D, SIS412, SIS41, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIS412DN-T1-GE3 DISTI # V36:1790_07433130	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	21000	15000:$0.1957 6000:$0.2027 3000:$0.2175
SIS412DN-T1-GE3 DISTI # V72:2272_07433130	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	582	500:$0.2988 250:$0.3257 100:$0.3619 25:$0.4271 10:$0.5220 1:$0.6123
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	55350In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	55350In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	48000In Stock	30000:$0.1995 15000:$0.2047 6000:$0.2126 3000:$0.2284
SIS412DN-T1-GE3 DISTI # 30544025	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	21000	3000:$0.2175
SIS412DN-T1-GE3 DISTI # 30214242	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	6000	3000:$0.2455
SIS412DN-T1-GE3 DISTI # 30605326	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2928	32:$0.7863
SIS412DN-T1-GE3 DISTI # 29055604	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	582	31:$0.6123
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	150000:$0.2017 75000:$0.2051 30000:$0.2086 15000:$0.2161 9000:$0.2241 6000:$0.2327 3000:$0.2420
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS412DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.1923 18000:$0.1976 12000:$0.2032 6000:$0.2119 3000:$0.2183
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2519 18000:€0.2709 12000:€0.2929 6000:€0.3409 3000:€0.4999
SIS412DN-T1-GE3. DISTI # 15AC0289	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:15.6W,No. of Pins:8Pins RoHS Compliant: No	3000	30000:$0.1930 18000:$0.1980 12000:$0.2040 6000:$0.2120 1:$0.2190
SIS412DN-T1-GE3 DISTI # 55R1906	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 12A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	7219	1000:$0.3030 500:$0.3680 100:$0.4810 50:$0.5240 25:$0.5680 10:$0.6110 1:$0.6920
SIS412DN-T1-GE3 DISTI # 70459588	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant	0	3000:$0.7330 6000:$0.5630
SIS412DN-T1-GE3 DISTI # 781-SIS412DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	31670	1:$0.6000 10:$0.4790 100:$0.3640 500:$0.3000 1000:$0.2400 3000:$0.2180
SIS412DN-T1-GE3	Vishay Siliconix	POWER FIELD-EFFECT TRANSISTOR, 8.7A I(D), 30V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	800	201:$0.2100 45:$0.3000 1:$0.6000
SIS412DN-T1-GE3	Vishay Intertechnologies		15432
SIS412DN-T1-GE3 DISTI # 1807358	Vishay Intertechnologies	N-CH POWERPAK1212 30V 24MOHM@10V- LEAD(P, RL	3000	9000:£0.1850 6000:£0.1910 3000:£0.2020
SIS412DNT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3000
SIS412DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 6000	3000:$0.2150 6000:$0.2040 12000:$0.1990 18000:$0.1930
SI7804DN-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SIS412DN-T1-GE3	Americas -
SIS412DN-T1-GE3 DISTI # 1779238	Vishay Intertechnologies	MOSFET, N-CH, 30V, 12A, POWERPAK8	6947	500:£0.2340 250:£0.2590 100:£0.2840 10:£0.4150 1:£0.5340
SIS412DN-T1-GE3 DISTI # C1S806001139235	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2928	1000:$0.2640 500:$0.3340 100:$0.4220 50:$0.4390 10:$0.6290
SIS412DN-T1-GE3 DISTI # 1779238	Vishay Intertechnologies	MOSFET, N-CH, 30V, 12A, POWERPAK8 RoHS: Compliant	7088	1000:$0.3620 500:$0.4520 100:$0.5490 10:$0.7220 1:$0.9040

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIS407DN-T1-GE3 OMO.#: OMO-SIS407DN-T1-GE3	MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
	Mfr.#: SIS444DN-T1-GE3 OMO.#: OMO-SIS444DN-T1-GE3-VISHAY	IGBT Transistors MOSFET N-Channel 30V
	Mfr.#: SIS4001X01-3070 OMO.#: OMO-SIS4001X01-3070-1190	Neu und Original
	Mfr.#: SIS402DN-T1-E3 OMO.#: OMO-SIS402DN-T1-E3-1190	Neu und Original
	Mfr.#: SIS402DN-T1-GE3CT OMO.#: OMO-SIS402DN-T1-GE3CT-1190	Neu und Original
	Mfr.#: SIS407DN-T1-GE3 OMO.#: OMO-SIS407DN-T1-GE3-VISHAY	MOSFET P-CH 20V 25A 1212-8 PPAK
	Mfr.#: SIS412DN-T1-E3 OMO.#: OMO-SIS412DN-T1-E3-1190	Neu und Original
	Mfr.#: SIS427EDN-T1-E3 OMO.#: OMO-SIS427EDN-T1-E3-1190	Neu und Original
	Mfr.#: SIS436DN-T1-GE3 OMO.#: OMO-SIS436DN-T1-GE3-VISHAY	MOSFET N-CH 25V 16A PPAK 1212-8
	Mfr.#: SIS4407 OMO.#: OMO-SIS4407-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von SIS412DN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIS412D 9
SIS412 11
SIS41 20
SIS4 92
SIS 843

SIS412DN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes