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SIS410DN-T1-GE3

SIS410DN-T1-GE3
Mfr. #:
SIS410DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 20V 35A PPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS410DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS410DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIS410DN-GE3
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR 1212-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR 1212-8
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
52W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
1600pF @ 10V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
35A (Tc)
Rds-On-Max-Id-Vgs
4.8 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Lade-Qg-Vgs
41nC @ 10V
Pd-Verlustleistung
5.2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns
Anstiegszeit
15 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
35 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
30 ns
Typische-Einschaltverzögerungszeit
25 ns
Vorwärts-Transkonduktanz-Min
70 S
Kanal-Modus
Erweiterung
Tags
SIS410D, SIS410, SIS41, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Teil # Mfg. Beschreibung Aktie Preis
SIS410DN-T1-GE3
DISTI # V36:1790_09216084		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000000:$0.4227
  • 1500000:$0.4229
  • 300000:$0.4329
  • 30000:$0.4484
  • 3000:$0.4509
SIS410DN-T1-GE3
DISTI # V72:2272_09216084		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		161825In Stock
    • 1000:$0.4975
    • 500:$0.6302
    • 100:$0.7629
    • 10:$0.9790
    • 1:$1.0900
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		161825In Stock
    • 1000:$0.4975
    • 500:$0.6302
    • 100:$0.7629
    • 10:$0.9790
    • 1:$1.0900
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		159000In Stock
    • 15000:$0.4122
    • 6000:$0.4283
    • 3000:$0.4508
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R (Alt: SIS410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4459
    • 18000:€0.4659
    • 12000:€0.5269
    • 6000:€0.6499
    • 3000:€0.9059
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.3759
    • 18000:$0.3859
    • 12000:$0.3969
    • 6000:$0.4139
    • 3000:$0.4259
    SIS410DN-T1-GE3
    DISTI # 08R0706    		Vishay IntertechnologiesMOSFET, N CH, 20V, 35A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52W RoHS Compliant: Yes0
    • 12000:$0.3850
    • 6000:$0.4340
    • 3000:$0.4560
    • 1:$0.4590
    SIS410DN-T1-GE3
    DISTI # 05W6932    		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
    • 1000:$0.4870
    • 500:$0.6080
    • 250:$0.6510
    • 100:$0.6860
    • 10:$0.8680
    • 1:$0.8960
    SIS410DN-T1-GE3
    DISTI # 55R1905    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):4mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:5.2W,Operating RoHS Compliant: Yes1220
    • 1000:$0.5640
    • 500:$0.5960
    • 100:$0.6930
    • 50:$0.7630
    • 25:$0.8320
    • 10:$0.9020
    • 1:$1.1000
    SIS410DN-T1-GE3
    DISTI # 781-SIS410DN-T1-GE3    		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		7753
    • 1:$1.0800
    • 10:$0.8920
    • 100:$0.6850
    • 500:$0.5890
    • 1000:$0.4640
    • 3000:$0.4330
    • 6000:$0.4120
    • 9000:$0.3960
    SIS410DN-T1-GE3
    DISTI # 1779235    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK8
    RoHS: Compliant    		1221
    • 1000:$0.7500
    • 500:$0.9500
    • 100:$1.1500
    • 10:$1.4800
    • 1:$1.6400
    SIS410DN-T1-GE3
    DISTI # 1779235    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK81426
    • 500:£0.4280
    • 250:£0.4630
    • 100:£0.4970
    • 25:£0.6470
    • 5:£0.7600
    SIS410DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      SIS410DN-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8Americas - 6000
      • 3000:$0.4250
      • 6000:$0.4040
      • 12000:$0.3910
      • 18000:$0.3800
      Bild Teil # Beschreibung
      SIS410DN-T1-GE3

      Mfr.#: SIS410DN-T1-GE3

      OMO.#: OMO-SIS410DN-T1-GE3

      		 MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
      SIS410DN

      Mfr.#: SIS410DN

      OMO.#: OMO-SIS410DN-1190

      		 Neu und Original
      SIS410DN-T1-E3

      Mfr.#: SIS410DN-T1-E3

      OMO.#: OMO-SIS410DN-T1-E3-1190

      		 Neu und Original
      SIS410DN-T1-GE3

      Mfr.#: SIS410DN-T1-GE3

      OMO.#: OMO-SIS410DN-T1-GE3-VISHAY

      		 MOSFET N-CH 20V 35A PPAK 1212-8
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von SIS410DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,56 $
      0,56 $
      10
      0,54 $
      5,36 $
      100
      0,51 $
      50,75 $
      500
      0,48 $
      239,65 $
      1000
      0,45 $
      451,10 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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